Quantitative analysis of Ag-doped SnS thin films for solar cell applications
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Quantitative analysis of Ag‑doped SnS thin films for solar cell applications S. Sebastian1 · S. Vinoth2 · K. Hari Prasad3 · M. S. Revathy4 · S. Gobalakrishnan5 · P. K. Praseetha5 · V. Ganesh6 · S. AlFaify6 Received: 1 July 2020 / Accepted: 29 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This work reports the changes in the properties of Ag-doped SnS thin films (SnS:Ag), and CdS/SnS solar cells with an Ag dopant concentration in the absorber varied from 0 to 6 wt.% in steps of 3 wt.% prepared by the nebulizer-assisted spray pyrolysis method (NSP). X-ray diffraction (XRD) studies confirm the SnS:Ag (3 wt.%) thin film has a higher crystallite size than the undoped and SnS:Ag (6 wt.%) thin film. An atomic force microscope (AFM) image shows SnS:Ag (3 wt.%) film possesses larger-sized grains than other samples. The energy-dispersive X-ray analysis (EDS) confirms the presence of the constituent elements in the SnS:Ag thin films. PL analysis revealed the films possess the band edge as well as the other defect-related emissions of SnS. The Ag doping facilitates the tunability in absorption and decreases in optical bandgap for the SnS:Ag (3 wt.%) film. Hall measurements provide the low resistivity of 3.31 Ωcm, the high charge carrier concentration of 1.56 × 1017 cm−3, and high mobility of 12.1 c m2 V−1 s−1 for 3 wt.% Ag-doped SnS film. The better photovoltaic conversion efficiency of 0.285% was observed for the device prepared with SnS:Ag (3 wt.%) thin film compared to other samples due to enhanced absorption, optimum bandgap, and better electrical properties. Keywords SnS thin films · Ag doping · Characterization · Photoluminescence · Electrical studies · Solar cell applications
1 Introduction
* V. Ganesh [email protected] 1
PG and Research Department of Physics, Arul Anandar College, Karumathur, Madurai 625514, India
2
Department of Electronics and Communication Engineering, Manakula Vinayagar Institute of Technology, Kalitheerthalkuppam, Puducherry 605107, India
3
Department of Physics, Institute of Aeronautical Engineering, Dundigal, Hyderabad, India
4
Department of Physics, School of Advanced Sciences, Kalasalingam Academy of Research and Education, Krishnankoil 626126, India
5
Department of Nanotechnology, Noorul Islam Centre for Higher Education, Kumaracoil, Kanyakumari, Tamil Nadu 629180, India
6
Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, Abha 61413, Saudi Arabia
Recently, new absorber materials with low cost, less toxic, highly abundant thin-film materials for solar energy conversion devices have been attracting researchers worldwide [1]. Metal sulfide-based semiconductors thin films possess a high absorption coefficient, wide excitation spectra, and huge charge carriers per photon for solar cells [2]. It has numerous technological applications such as absorber layers in heterojunction solar cells [3], photodetectors [4], Schottky diodes [5], optoelectr
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