Solution-combustion-based nickel oxide hole transport layers via fuel regulation in inverted planar perovskite solar cel
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Solution‑combustion‑based nickel oxide hole transport layers via fuel regulation in inverted planar perovskite solar cells Yue Liu1 · Hongkun Cai1,2 · Jian Su1 · Xiaofang Ye1 · Jingtao Yang1 · Xiaojuan Liang1 · Jiayi Guan1 · Xiaojun Zhou1 · Junyang Yin3 · Jian Ni1,2 · Juan Li1,2 · Jianjun Zhang1,2 Received: 10 May 2020 / Accepted: 23 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In recent years, metal oxide hole transporting layers (HTLs) have been commonly used in inverted planar perovskite solar cells. Due to high optical transmittance, better long-term stability, and suitable energy band characteristics, NiOx HTLs have been intensively studied. The NiOx materials prepared by solution-combustion method with characteristics of self-energy generation and exothermic reaction have received much attention, which significantly reduces the reaction temperature compared with the traditional sol–gel methods. In this paper, a NiOx film with better conductivity and enhanced carrier extraction was obtained by adjusting the fuel concentration in the nickel oxide precursor solution. It was also confirmed that perovskite film was improved with larger grain size and reduced trap-state densities. As a consequence, by using the 10 ul/ ml optimal concentration of acetylacetone in the NiOx precursor solution, the inverted planar perovskite solar cells achieved a maximum power conversion efficiency of 14.37%.
1 Introduction Organic/inorganic hybrid PSCs have developed rapidly in recent years due to their long carrier diffusion length, high tolerance for defects, tunable band structure, broad light absorption range, etc. [1–3]. Since the advent of perovskite in 2009, the PCE of perovskite solar cells has grown rapidly from the original 3.8%, and has now exceeded 25% [4]. The simple solution-based preparation process and low preparation cost also make it an indispensable part of the new generation of photovoltaic technology [5–8].
Electronic supplementary material The online version of this article (https://doi.org/10.1007/s10854-020-04087-y) contains supplementary material, which is available to authorized users. * Hongkun Cai [email protected] 1
Department of Electronic Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
2
Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
3
Tianjin Key Laboratory of Film Electronic &Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China
Two main device structures of PSCs have been investigated and researched during the past few years, which are n-i-p and p-i-n architecture.[6, 7, 9–11] For the p-i-n-type device, the configurations have received more and more attention by many researchers because of the negligible hysteresis effect, lower processing temperature, etc. [12–15]. Traditional p-i-n-type devices use poly(3,4-ethylen
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