Effect of doped polyaniline/graphene oxide ratio as a hole transport layer on the performance of perovskite solar cell
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Effect of doped polyaniline/graphene oxide ratio as a hole transport layer on the performance of perovskite solar cell M. Habib1,* , M. Feteha1, M. Soliman1, A. Abdel Motagaly2, S. El-Sheikh3, and Sh. Ebrahim1 1
Department of Materials Science, Institute of Graduate Studies and Research, Alexandria University, Sharqi, Alexandria, Egypt Paris-Saclay University, ICMMO-Eriée, UMR CNRS 8182, 91405 Orsay, France 3 Nanomaterials and Nanotechnology Department, Central Metallurgical R&D Institute, Cairo 11421, Egypt 2
Received: 6 May 2020
ABSTRACT
Accepted: 4 September 2020
Perovskite solar cells (PSCs) are believed to be one of a promising choice of the third-generation technology platforms to address the increasing green energy demands. The main objective of this work is to fabricate a hole transport layer (HTL) based on doped polyaniline (PANI) and graphene oxide with different ratios. This layer was characterized using Raman spectroscopy, scanning electron microscope (SEM), atomic force microscopy (AFM), UV–Visible spectroscopy, photoluminescence, contact angle, Hall effect and current density– voltage measurements. Photoluminescence confirmed that the HTL of PANI/ GO with 1:0.5 ratio had the highest efficiency to extract hole carriers. The conductivity and carrier concentrations of this layer were increased with the addition of small amounts of GO up to 1:0.5 and declined at the high ratio of 1:1. The optimal performance of the fabricated inverted PSC using HTL of PANI/ GO with 1:0.5 ratio had short-current density (Jsc), open circuit voltage (Voc), fill factor (FF) and efficiency of 21.23 mA/cm2, 0.52 V, 0.67 and 9.24%, respectively.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Organometal halide perovskites have a great attention due to their high absorbing and charge generation and transportation in photovoltaic cells [1–3]. The solution process of these perovskite materials can be carried out at room temperature and consequently reduces the fabrication cost [4–8]. The hole transporting materials (HTMs) as p-type
semiconductors extract and transport the positive hole carriers from the active layer to the electrode. Nowadays, there is a trend to find out new HTMs with a low cost to provide an efficient and stable perovskite solar cells (PSCs) [9–13]. HTMs should be have high carriers mobility, high transparent in the visible spectrum and pinhole-free [9, 14–16]. The conducting polymeric materials as HTMs are widely used in PSCs and namely
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https://doi.org/10.1007/s10854-020-04425-0
J Mater Sci: Mater Electron
poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) is the most common one. Also, poly(3hexylthiophene-2,5-diyl) and poly(bis(4-phenyl)(2,5,6-trimentlyphenyl)amine) have been used [9, 17–19]. PANI as a p-type semiconductor has many features and advantages such as simple of doping process and electrical and environmental stability. This candidates PANI to be used in PSCs application [20, 21]. M
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