Solution-Processed Oxide Films, Devices, and Integrated Circuits
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Solution-Processed Oxide Films, Devices, and Integrated Circuits Jeremy T. Anderson1, Douglas A. Keszler1, Stephen T. Meyers1, Hai Q. Chiang2, David Hong2, Rick E. Presley2, and John F. Wager2 1 Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, OR, 97331-4003 2 Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501
ABSTRACT A distinct class of precursor chemistries has been developed for solution-phase deposition of oxide thin films. Rapid liquid-to-solid conversions are facilitated by using high nuclearity species and labile inorganic ligands to promote fast condensation reactions. Consequently, applied deposition strategies differ from conventional sol-gel and surface mediated growth reactions. Select oxide materials have been incorporated in transistor devices and circuits as evidence of thin-film quality and proof of function.
INTRODUCTION Current manufacture of electronic devices is largely predicated on high-cost subtractive processing involving high temperature and vacuum processing. To achieve lower fabrication costs, solution deposition through high-speed printing and adaptable manufacture, i.e., digital fabrication via ink-jet printing, is being examined. Thin-film deposition from liquid solutions also simplifies large-area coverage, obviating the need for high-energy vaporization and related vacuum chambers. Within this context, oxide materials are essential active and passive components for numerous structures and devices. Because liquid-phase deposition of oxides has been considered an attractive alternative to physical vapor deposition (PVD), it has been a subject of considerable research over the past several decades. The inherent advantages of oxide materials [1, 2] are fully realized in films that are atomically dense and smooth, though such films are very seldom realized via solution methods. Existing solution precursors and oxide conversion mechanisms have fundamentally limited deposition rates under most practical conditions, and attempts to increase deposition rates have resulted in textured films that are not suitable for many applications, especially high-speed, low-temperature printing [3, 4]. We have therefore developed precursor systems that tolerate rapid liquid to solid conversion – even while preserving thin film continuity. Our strategy is based on prompt inorganic condensation (PIC) between solution phase constituents, whereby inorganic precursors bond extensively without trapping large organic constituents. Resultant films exhibit uniform densities and smooth interfaces, as necessary for a variety of digital fabrication platforms. Given that solution-phase deposition has been extensively studied, it has erroneously been assumed that high-quality oxide films are readily produced, and therefore that appropriate
sets of precursors already exist for printing and digital fabrication. Solutions may easily be synthesized and applied to surfaces, as organic additives effectively inhibit p
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