Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems
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Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems Yiran Wang, Bing Chen, Dong Liu, Bin Gao, Lifeng Liu*, Xiaoyan Liu, Jinfeng Kang* Institute of Microelectronics, Peking University, Beijing 100871, China *Email: [email protected]; [email protected]; ABSTRACT A solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated. INTRODUCTION Transparent solid-state circuit systems have been extensively studied as the promising technology for the application in large area electronic systems by stacking clear display, electronic paper or other transparent devices into clear spaces[1-3]. As one of the critical devices of the circuit systems, the transparent memory devices are needed but it is difficult to realize by the traditional memory technology. Oxide-based resistive random access memory (RRAM), which presents the excellent device performances and data storage functions, shows the great potential in transparent memory application. Although the transparent oxide thin films could be deposited by sputtering, chemical vapor deposition, atomic layer deposition, and pulsed laser deposition, the solution-processed technology[4] shows the great advantages for the low-cost and large-area film application. In this work, a solution-processed method is developed to fabricate fully transparent RRAM (TRRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes. Layers including oxide layer and top layer were fabricated by spin-coating using sol-gel method . The resistive switching behaviors of the devices are investigated. EXPERIMENT
Figure 1. shows the configuration of our TRRAM device on glass substrate. 15-nm-thick ZrO2 films were fabricated on FTO/glass substrates by sol-gel process. For the active layer, as shown in figure 2., zirconium n-butoxide [Zr(OC4H9)4] ,80wt. % in n-butanol , was used as precursor material[5]. Ethanol was selected as solvent. Acetylacetone(C5H8O2) and acetic acid (CH3COOH) were chosen as reagents in stabilizing the precursor. Usually, the mol ratio of zirconium butoxide : anhydrous ethanol : acetic acid is 1: 16 : 4 in a batch[6]. After mixing zirconium butoxide with ethanol, acetylacetone and acetic acid were added. The solution
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