Spin-on Silicon Oxide (Sox): Deposition and Properties
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SPIN-ON SILICON OXIDE (SOX): DEPOSITION AND PROPERTIES GERALD SMOLINSKY and VIVIAN RYAN AT&T Bell Laboratories, Murray Hill, NJ 07974-2070
ABSTRACT
High quality SiO2 films are obtained by spin-coating wafers with a sol/gel of silicic acid in either a 2, 3, or 4-carbon linear-aliphatic alcohol. Some properties of the deposited film depend upon the solvent: such as density, tensile stress, and infrared spectrum. However, Rutherford-back-scattering analysis indicates the O:Si ratio (2.00 ±0.05) to be independent of the solvent. The infrared spectrum of the oxide exhibits Si-OSi absorption in the range 1070-1080 cm,-1 depending on the curing temperature and solvent system. (The weaker Si-OSi band is found at 804-810 cm.-1) In addition, low-temperature-cured (
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