Epitaxial Oxide Films on Silicon: Growth, Modeling and Device Properties
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and Device Properties R. Droopad*, J. Wang, K. Eisenbeiser, Z. Yu, J. Ramdani, J. A. Curless, C. D. Overgaard, J. M. Finder, J. A. Hallmark, V. Kaushik+, B. Y. Nguyen+ , D. S. Marshall, W. J. Ooms, Physical Sciences Research Laboratories Motorola Labs, 2100E Elliot Road, Mail Drop EL308, Tempe AZ 85284 -Materials and Structures Laboratory, Semiconductor Products Sector, Austin TX 78721 *Tel: (480) 413-3663, Fax: (480) 413-6631, Email: [email protected]
ABSTRACT Using molecular beam epitaxy, thin films perovskite-type oxide SrxBa1_xTiO 3 (0
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