Sputtering of LiF and other halide crystals in the electronic energy loss regime
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THE EUROPEAN PHYSICAL JOURNAL D
Regular Article
Sputtering of LiF and other halide crystals in the electronic energy loss regime Marcel Toulemonde1,a , Walter Assmann2 , Brigitte Ban-d’Etat1 , Markus Bender3 , Andreas Bergmaier4 , Philippe Boduch1 , Serge Della Negra5 , Jinglai Duan6 , Aymann S. El-Said7 , Florian Gr¨ uner2,8,9 , Jie Liu6 , Daniel Leli`evre1 , Hermann Rothard1 , Tim Seidl3,10 , Daniel Severin3 , Jean Paul Stoquert11 , Kay-Obe Voss3 , and Christina Trautmann3,10 1
2 3 4 5 6 7 8 9 10 11
Centre de Recherche sur les Ions, les Mat´eriaux et la Photonique, CIMAP-GANIL, Normandie University CEA, CNRS, Caen 14000, France Ludwig-Maximilians-Universit¨ at M¨ unchen, Garching 85748, Germany GSI Helmholtzzentrum f¨ ur Schwerionenforschung, Darmstadt 64291, Germany Universit¨ at der Bundeswehr Muenchen, Neububerg, Germany IPNO, IN2P3-CNRS, Orsay 91406, France IMP, CAS, Lanzhou 730000, P.R. China Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia Universit¨ at Hamburg, UHH, Hamburg, Germany Center for Free Electron Laser Science, CFEL, Hamburg, Germany Technische Universit¨ at Darmstadt, Darmstadt 64289, Germany ICube, CNRS, Universit´e de Strasbourg, INSA Strasbourg, Illkirch 67412, France Received 20 January 2020 / Received in final form 14 April 2020 Published online 7 July 2020 c EDP Sciences / Societ`
a Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020 Abstract. Sputtering experiments were performed by irradiating LiF, NaCl, and RbCl crystals with various swift heavy ions like S, Ni, I, Au with energies between 60 and 210 MeV, C60 clusters between 12 and 30 MeV or Pb ions between 730 and 6040 MeV. Sputtered species are collected on arc-shaped catchers and subsequently analyzed by elastic recoil detection analysis or Rutherford backscattering analysis. The study focuses on angular distributions and total yields for LiF and covers a broad range of experimental parameters including cleaved or rough sample surfaces, ion fluence, beam incident angles, and different ion velocities leading to electronic energy loss (Se ) values from 5 to 45 keV/nm. In most cases, the angular distribution has two components, a jet-like peak perpendicular to the surface sample superimposed on a broad isotropic cosine distribution whatever is the beam incident angle. The observation of the jet depends mainly on the surface flatness and angle of ion incidence. However, the jet does not appear clearly when irradiated with C60 cluster. The sputtering yield is stoichiometric and characterized by huge total yields of up to a few 105 atoms per incident ion. The yield follows a power law as function of electronic energy loss, Y follows an exponential law with Sn e with n ∼ 4. While the azimuthal symmetry for sputtering is observed at low ion velocity (∼1 MeV/u), it seems to be lost at high velocity (>4 MeV/u). The data provide a comprehensive overview how the angular distribution and the total sputtering yield scale with the energy loss, beam incidence angle an
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