Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.25
Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors Chen Jiang, Hanbin Ma and Arokia Nathan Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
Abstract: All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (10 5). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.
INTRODUCTION: Rapid advances in organic electronic materials have stimulated the development of organic thin-film transistors (OTFTs) with low fabrication cost, high performance, and good mechanical flexibility [1-3]. This rapid development of OTFTs has made them potential candidates for various applications, such as sensors [4], radio frequency identification (RFID) tags [5], point-of-care diagnostic devices [6], and wearable systems [7]. All-inkjet-printed (AIJP) OTFTs take the advantages of inkjet printing technology, including drop-on-demand direct patterning, reduced material wastage, and high compatibility to large area manufacturing. Therefore, AIJP OTFTs are in high demand for future low-cost large-area electronics. However, to achieve their use in real-world applications, two issues commonly seen in OTFTs need to be addressed, i.e., high power consumption and instability during storage and operation. For the power consumption issue, our recent report has demonstrated that AIJP low-voltage OTFTs can be achieved through interface engineering and proper process optimization [8]. For the stability issue, although there have been several studies on the stability of vacuum-processed OTFTs [9], the material deposition processes in AIJP OTFTs are quite different from conventional vacuum processes, which might result in variation in material quality and device performance. In this study, several aspects of stability in AIJP OTFTs were investigated to examine their overall feasibility. The stability tests include mechanical bending, shelf life assessment, and bias stress. During the tests, the electrical transfer characteristics of the devices are measured and compared before and after each type of stress to identify the
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