Stability Analysis of Carbon Nanotube Interconnects

This paper deals with frequency and stability response of single wall carbon nanotube bundle (SWB) and multiwall carbon nanotube bundle (MWB) at global interconnect lengths. The performance of SWB and MWB interconnects are analyzed using driver-interconne

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Abstract This paper deals with frequency and stability response of single wall carbon nanotube bundle (SWB) and multiwall carbon nanotube bundle (MWB) at global interconnect lengths. The performance of SWB and MWB interconnects are analyzed using driver-interconnect-load system. It is analyzed that MWB interconnects are more stable than SWB interconnects. It is illustrated that stability of both SWB and MWB interconnects increases with increase in interconnect length. The analytical model for stability and frequency response using ABCD matrix has been formulated. Using frequency response, it is observed that the bandwidth of SWB and MWB interconnects are 7.94 and 22.2 GHz respectively for an interconnect length of 500 µm. The results are verified using SPICE simulations. The time delay analysis has been performed for different interconnect lengths. Further, it is investigated that delay reduces with increasing number of shells in MWB interconnect.



Keywords Carbon nanotubes (CNT) Kinetic inductance resistance Quantum capacitance SWCNT





 MWCNT  Quantum

1 Introduction In VLSI technology, the chip performance and signal integrity is dependent on interconnect delay in deep submicron technology (DSM) [1]. As technology scales down interconnects are a major concern as these degrades system performance and M.G. Kumar (&)  Y. Agrawal  R. Chandel Electronics and Communication Engineering, National Institute of Technology Hamirpur, Hamirpur, Himachal Pradesh, India e-mail: [email protected] Y. Agrawal e-mail: [email protected] R. Chandel e-mail: [email protected] © Springer Science+Business Media Singapore 2017 P. Deiva Sundari et al. (eds.), Proceedings of 2nd International Conference on Intelligent Computing and Applications, Advances in Intelligent Systems and Computing 467, DOI 10.1007/978-981-10-1645-5_2

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causes reliability problems. With scaling technology, grain boundary and surface scattering phenomenon increases in copper interconnects [2]. At high frequencies, issues like skin effect, operational bandwidth and stability response affect the performance of copper interconnects [3]. To overcome these limitations, the carbon nanotubes (CNT) have been proposed as potential materials for interconnect applications as these possess extremely long mean free path (MFP), large current capability [4]. CNTs are made by graphene sheet that are rolled up into cylindrical structure. CNTs are classified into single wall carbon nanotubes (SWCNTs) and multiwall carbon nanotubes (MWCNTs). SWCNTs are either metallic or semiconducting depending on their chirality [5]. But, MWCNTs are always metallic in nature [6]. Also, MWCNTs are easier to fabricate as compared to SWCNTs due to their growth process. The most promising material for global interconnects is MWCNTs due to its high current carrying capability than SWCNTs. To analyze the performance of SWB and MWB interconnects for on-chip applications, frequency and stability response have been performed. It is important to note that stabil

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