Statistical and fractal analysis of nitrogen ion implanted tantalum thin films
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Statistical and fractal analysis of nitrogen ion implanted tantalum thin films A. H. Ramezani1 · S. Hoseinzadeh2 · Zh. Ebrahiminejad1 Received: 2 April 2020 / Accepted: 26 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Tantalum bulk has been implanted by nitrogen ions at an energy30 keV and at various doses of 1 × 1017, 3 × 1017, and 10 × 1017 ions/cm2. As a result, thin films are rough; their morphology and stochastic properties have been investigated. The monofractal analysis is done for unimplanted and implanted samples based on the statistical analysis conception. The correlation function and also the correlation length of the samples have been studied. Also, the power spectral density, the dimension of the fractal, the distribution of height, and the skewness and kurtosis (the higher-order moments) of the surface height have been investigated. The results show the deviation of height distribution from the gaussian one. The measurement of jagged and irregularity of samples have been investigated by calculating the roughness exponent and fractal dimensions. The rough samples which have been produced by ion bombardment have the self-affine fractal properties. Keywords Tantalum bulk · Nitrogen ion implantation · Monofractal analysis · Fractal dimension
1 Introduction Titanium has suitable mechanical properties, low density, and excellent biocompatibility, high corrosion resistance. Therefore, for many years, titanium was used extensively in experimental works because of its technological applications [1–4]. Various researches have been motivated to improve the titanium characteristics, such as sputtering model, ion coating, and ion implantation. The ion implantation method has been frequently used because it introduces other chemical types and generates imperfections in target materials [5–8]. Carbon, nitrogen, and oxygen have been used to improve the surface of the titanium. The hardness wears resistance, and corrosion resistance of Tantalum surfaces usually improves by nitrogen ion implantation and allows the film growth process to keep the substrate at low or adequate * A. H. Ramezani [email protected] * S. Hoseinzadeh [email protected] 1
Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
Department of Mechanical and Aeronautical Engineering, Center for Asset Integrity Management, University of Pretoria, Pretoria, South Africa
2
temperatures [9–11]. By nitrogen implantation techniques, the titanium nitride can be formed on titanium surfaces. The characteristics of the samples provided by the atomic force microscopy (AFM), the x-ray diffraction (XRD), and the scanning electron microscopy (SEM) images. There are several methods such as ‘blanket’ fractal analysis [12], ‘skyscraper’ fractal analysis [13], and the box-counting method [14] for investigation on the fractality behavior of the experimentally generated thin films [15–18]. Recently, the effect of nitrogen ion implantation on structural and mechanical characterist
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