Strain relaxation in GaN layers grown on porous GaN sublayers
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Strain relaxation in GaN layers grown on porous GaN sublayers M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov and V.A. Dmitriev MRS Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 01 / January 1999 DOI: 10.1557/S1092578300000703, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000703 How to cite this article: M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov and V.A. Dmitriev (1999). Strain relaxation in GaN layers grown on porous GaN sublayers . MRS Internet Journal of Nitride Semiconductor Research, 4, pp e14 doi:10.1557/ S1092578300000703 Request Permissions : Click here
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Internet Journal Nitride Semiconductor Research
Strain relaxation in GaN layers grown on porous GaN sublayers M. Mynbaeva1, A. Titkov1, A. Kryzhanovski1, I. Kotousova1, A.S. Zubrilov1, V.V. Ratnikov1, V. Yu. Davydov1, N.I. Kuznetsov1, K. Mynbaev1, D.V. Tsvetkov2, S. Stepanov2, A.Cherenkov2 and V.A. Dmitriev3 1Ioffe
Physical-Technical Institute, Growth Research Center, 3Technologies and Devices International, Inc., 2Crystal
(Received Saturday, August 28, 1999; accepted Wednesday, November 10, 1999)
We have studied epitaxial GaN layers grown by hydride vapour phase epitaxy (HVPE) on porous GaN sublayers formed on SiC substrates. It was shown that these layers can be grown with good surface morphology and high crystalline quality. X-ray, Raman and photoluminescent (PL) measurements showed that the stress in the layers grown on porous GaN was reduced to 0.1-0.2 GPa, while the stress in the layers grown directly on 6H-SiC substrates remains at its usual level of about 1 GPa. Thus, we have shown that growth on porous GaN sublayer is a promising method for fabrication of high quality epitaxial layers of GaN with low strain values.
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Introduction
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Recently, much effort has been made to develop a technology that would allow growth of residual stress-free epitaxial layers of GaN. Poor lattice match and difference in thermal expansion coefficients with foreign substrates being currently used for epitaxial growth of GaN layers make these layers quite strained, with average value of biaxial stress ranging up to 1 GPa. This stress affects both structural and electric properties of the layers and devices built on such layers cannot take full advantage of intrinsic properties of GaN. Porous materials seem to offer a good opportunity for epitaxial growth of high-quality epitaxial films, as they are expected to be able to substantially reduce the strain in layers grown on top of th
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