Strain and Compositional Analysis of InGaN/GaN Layers

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Strain and Compositional Analysis of InGaN/GaN Layers Sérgio Pereiraa,b, Maria. R. Correiaa, Estela Pereiraa , C. Trager-Cowanb, F. Sweeneyb, P.R. Edwardsb, K.P. O’Donnellb, E. Alvesc, A.D. Sequeirac, N. Francoc a Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal b Department of Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG,UK. c I.T.N., Departamento de Física, E.N.10, 2686-935 Sacavém, Portugal ABSTRACT We investigate strain and composition of epitaxial single layers of wurtzite InxGa1-xN (0

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