Structural and luminescence properties of yellow phosphors prepared by a modified sol-gel method
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Research Letter
Structural and luminescence properties of yellow phosphors prepared by a modified sol–gel method Vasilica T¸ucureanu, National Institute for Research and Development in Microtechnologies, IMT-Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, Romania, http://www.imt.ro; Department of Materials Science, Transilvania University of Brasov, 29 Eroilor Blvd, Brasov 500036, Romania Alina Matei, Andrei Avram, Marian Cãtalin Popescu, Iuliana Mihalache, Marioara Avram, Cãtalin Valentin Mãrculescu, and Bianca Cãtãlina T¸ încu, National Institute for Research and Development in Microtechnologies, IMT-Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, Romania, http://www.imt.ro Marius Volmer, Electrical Engineering and Applied Physics Department, Transilvania University of Brasov, 29 Eroilor Blvd, Brasov 500036, Romania, http://www.unitbv.ro Daniel Munteanu, Department of Materials Science, Transilvania University of Brasov, 29 Eroilor Blvd, Brasov 500036, Romania Address all correspondence to Vasilica T¸ucureanu, at [email protected], [email protected] (Received 16 June 2017; accepted 22 August 2017)
Abstract In our paper, yttrium aluminum garnet doped with cerium (YAG:Ce) and terbium aluminum garnet doped with cerium (TAG:Ce) yellow garnet phosphors were prepared by a modified sol–gel method, using oxide, nitride as raw materials and acetylacetone, dimethyl sulfoxide, cetrimonium bromide in the hydrolysis and condensation step. The thermal treatment of the phosphors was performed at 1100 °C in order to transform it from amorphous to crystalline garnet phase. Structural, morphological, and luminescence properties were studied by Fourier transform infrared spectrometry, x-ray diffraction, scanning electron microscopy, and fluorescence spectroscopy. The results show that the modified sol–gel method provides a feasible approach to produce YAG:Ce and TAG:Ce yellow phosphors for the optoelectronic applications.
Introduction The increase of electricity consumption has led to the need of finding new sources for lighting with a power consumption as low as possible. Knowing that light-emitting diodes (LEDs) have a long life correlated with low-energy consumption, there is a need to manufacture devices based on semiconductor chips that can replace conventional lighting system.[1] In this context, the LEDs technology has experienced a real boom for generating white light. Currently there are two main methods for emission of white light using semiconductor devices. The first devices with white light emission are based on the use of individual colored LEDs, the RGB (red–green–blue) system. The RGB devices are widely used in video displays, rather than in a lighting system. Starting with the development of the blue LED based on indium gallium nitride (2014-Nobel Prize in Physics) has opened the door to the possibility of replacing conventional lighting systems (incandescent bulb, fluorescent, etc.) with a low-energy devices. Using a system for converting light emitted from a blue or UV chip
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