Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using
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Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, Paul T. Fini, J.P. Ibbetson, S. Keller, Steven DenBaars, J. S. Speck and U. K. Mishra MRS Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 01 / January 1999 DOI: 10.1557/S1092578300000582, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000582 How to cite this article: H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, Paul T. Fini, J.P. Ibbetson, S. Keller, Steven DenBaars, J. S. Speck and U. K. Mishra (1999). Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer . MRS Internet Journal of Nitride Semiconductor Research, 4, pp e2 doi:10.1557/S1092578300000582 Request Permissions : Click here
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Internet Journal Nitride Semiconductor Research
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer H. Marchand1, N. Zhang1, L. Zhao1, Y. Golan1, S. J. Rosner2, G. Girolami2, Paul T. Fini 1, J.P. Ibbetson1, S. Keller1, Steven DenBaars 1, J. S. Speck1 and U. K. Mishra1 1Electrical
and Computer Engineering and Materials Departments, University of California, Santa Barbara, Laboratories, Palo Alto,
2Hewlett-Packard
(Received Thursday, February 11, 1999; accepted Wednesday, March 10, 1999)
Lateral epitaxial overgrowth (LEO) on Si(111) substrates using an AlN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The -oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al2O3 substrates: the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screwcomponent threading dislocations; the density of threading dislocations is
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