Structural characterization and thermal stability of W/Si multilayers
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S. Enzo Department of Physical Chemistry, DD 2137, 30123 Venice, Italy
M. Jergel, S. Luby, and E. Majkova Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
I. Vavra Institute of Electrical Engineering, Slovak Academy of Science, 842 39, Bratislava, Slovakia (Received 7 January 1993; accepted 25 May 1993)
Tungsten/silicon multilayers with tungsten layers of a thickness of 1-2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio
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