Structural features and dopant gradients in Mg 2 Sn X Si 1-X ternary compounds

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Structural features and dopant gradients in Mg2SnXSi1-X ternary compounds E. Hatzikraniotis(1), G.S. Polymeris (1), C.B. Lioutas (1), A. Burkov(2), E-C. Stefanaki(1), A. Samunin(2), G. Isachenko(2), M.I. Fedorov(2), K.M. Paraskevopoulos(1) (1) (2)

Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR54124, Thessaloniki, Greece IOFFE Physical and Technical Institute of the Russian Academy of Sciences, 194021 St Petersburg, Russia.

ABSTRACT In the present work, a comparative study is attempted, dealing with the influence of the grain size distribution on the microstructure and the free carrier concentration in Mg2SnXSi1-X (x=0.2) ternary compounds doped with Sb. Structural in-homogeneities were monitored by using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) as well as Fourier transform infrared spectroscopy (FTIR) in the reflectivity mode. INTRODUCTION Energy harvesting is a very broad topic, whose importance in our world of rising global demand for energy is ever increasing. The field is rapidly advancing, and the need for renewable energy, energy efficiency, and energy harvesting is motivating the discovery of new materials and design of new devices and structures. Nowadays, most of the energy produced in our society is lost in terms of heat, mainly in electrical power generation and transport. The area of thermoelectric energy harvesting includes thermoelectric materials (TE) and devices, with applications in automotive waste heat recovery, aeronautics and deep space science exploration probes, in some military systems as well as domestic applications [1-3]. Many years after the pioneering work of Nikitin et al. [4], the study of Mg2SnXSi1−X has recently received widespread attention as prospective thermoelectric materials for waste heat recovery and conversion to electricity in the temperature range of 500–900 K [5,6], due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. Mg2SnXSi1−X phase diagram shows a miscibility gap in the range of 0.4

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