Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid therma
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Structural, Optical and Spectral Behaviour of InAsbased Quantum Dot Heterostructures Applications for High-performance Infrared Photodetectors
Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures
Saumya Sengupta Subhananda Chakrabarti •
Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures Applications for High-performance Infrared Photodetectors
123
Saumya Sengupta Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-5701-4 DOI 10.1007/978-981-10-5702-1
Subhananda Chakrabarti Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-5702-1
(eBook)
Library of Congress Control Number: 2017946056 © Springer Nature Singapore Pte Ltd. 2018 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Nature Singapore Pte Ltd. The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore
Preface
This monograph is based on research into the structural, optical and spectral properties of InAs/(In)(Al)GaAs quantum dot (QD) heterostructures, grown by using molecular beam epitaxy (MBE) with an ultimate aim to fabricate high-performance quantum dot infrared photodetectors (QDIPs). Since the introduction of intersubband photodetectors, much attention has focused on III–V semiconductor-based, MBE-grown quantum dot (QD) heterostructures for medium- and long-wavelength infrared-imaging technology. The three-dimensional carrier confinement possible with QDs is predicted to provide better performance than available from its quantum well counterpart. We optimized various MBE growth parameters using single-layer InAs/GaAs QDs and investigated
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