Structural peculiarities of 4 H -SiC irradiated by Bi ions
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tructural Peculiarities of 4H-SiC Irradiated by Bi Ions1 E. V. Kalininaa, V. A. Skuratovb, A. A. Sitnikovaa, E. V. Kolesnikovaa, A. S. Tregubovaa, and M. P. Shcheglova a
loffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia b Joint Institute for Nuclear Research, Dubna, 141980 Russia e-mail: [email protected] Submitted September 12, 2006; accepted for publication October 3, 2006
Abstract—X-ray diffraction, photoluminescence, micro–cathodoluminescence, and scanning and transmission electron spectroscopy were used to study the 710 MeV Bi ion irradiation effect in the fluence range of 1.4 × 109–5 × 1010 cm–2 on the structural and optical characteristics of pure high-resistivity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. It was established that the distribution of structural damage along the ion trajectory follows the computed profile of radiation defects formed in elastic collisions. The highdensity ionization effect on the material characteristics has not been found under the irradiation conditions used. Optical methods revealed a wide spectrum of radiation-induced defects, with some of them contributing to the recombination process. The damaged 4H-SiC crystal lattice party recovers after annealing at 500°C. PACS numbers: 61.82.Fk, 71.55.Ht, 78.60.Hk, 78.66.Li, 81.65.-b DOI: 10.1134/S1063782607040021 1
1. INTRODUCTION
Silicon carbide is one of the most radiation-resistant semiconductors and is attractive for use in harsh environments, including strong radiation, high temperature, and chemical activity. SiC finds application in space electronics, various nuclear-power setups, in the control of fissionable materials, and as promising material for inert matrix fuel host. Moreover, long-term radiation control detectors are required for physical experiments with intensive radiation, which are being planned for the next generation of accelerators such as the Large Hadron Collider and its modification SLHC at the European Organization for Nuclear Research (CERN). Considering the vast potential for the use of such radiation-resistant equipment, it is necessary to study in detail the effect of various high-energy particles on the structural, electrical, and optical properties of silicon carbide. The results of numerous experiments have shown that electron, proton, and neutron irradiation lead to similar kinds of radiation damage and change in the SiC structure (see, e.g., [1–4]). In contrast to such conventional radiation, the effect of high-energy heavy ions on SiC properties has not been studied in detail yet. At the same time, the study of the mechanism of defect formation in SiC subjected to irradiation by heavy ions with mass and energy more then 80 and 100 MeV, respectively, is of great interest for simulation of structural 1 The
text was submitted by the authors in English.
damage induced by fission fragments. Under conditions of high and superhigh ionization energy loss and high rate of generation of radiation defects, there is a possibility of the
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