Structure, Composition, and Properties of Zn- and O-Ion Implanted Silicon at Elevated Temperatures
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ICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
Structure, Composition, and Properties of Zn- and O-Ion Implanted Silicon at Elevated Temperatures V. V. Privezentseva,b,*, A. P. Sergeeva, V. S. Kulikauskasc, D. A. Kiselevd, A. Yu. Trifonove,f, and A. N. Tereshchenkog a FRC
Scientific Research Institute of System Analysis, Russian Academy of Sciences, Moscow, 117218 Russia Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218 Russia c Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991 Russia d National University of Science and Technology “MISiS”, Moscow, 119049 Russia e National Research University “MIET”, Moscow, Zelenograd, 124432 Russia f Lukin Scientific Research Institute of Physical Problems, Moscow, Zelenograd, 124432 Russia g Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432 Russia *e-mail: [email protected] b
Received August 5, 2020; revised August 15, 2020; accepted August 15, 2020
Abstract—Czochralski-grown Si substrates (n-type, orientation (100)) are subjected to double implantation, notably, initially by 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and then with 16O+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The substrates during implantation are held at ~350°C. The implanted Si substrates contain radiation-induced defects and their clusters such as twins, dislocations, and nanoclusters, notably, Zn-containing nanoclusters with an average radius of 10–50 nm predominantly consisting of the metallic Zn phase and partially from the ZnO phase formed on the surface and in the substrate near-surface layer. Photonic annealing to an effective temperature of 700°C optimal for the formation of the ZnO phase leads to the annealing of radiation-induced defects, and Zn-containing nanoclusters presumably consisting of the ZnO phase and partially of the Zn2SiO4 phase with an average diameter of 50– 100 nm are recorded on the sample surface. Keywords: silicon substrate, zinc, oxygen, hot implantation, nanoparticles, ZnO DOI: 10.1134/S1063782620120313
1. INTRODUCTION The properties of metallic and metal-oxide nanoparticles (NPs) in semiconducting and transparent dielectric matrices are widely studied because of the prospects of their application in modern optoelectronic and microelectronic devices [1]. Zinc-oxide NPs play an important role because ZnO is a directgap material with a band gap of 3.37 eV and has a large exiton binding energy of 60 meV. Therefore, zincoxide NPs can be used in light-emitting devices of the ultraviolet range [3, 4]. Due to other unique properties of ZnO such as the sorption effect, piezoelectricity, and ferromagnetism even at room temperature, they can be applied in solar cells [5], gas sensors [6], spintronic devices [7], memory devices (memristors) [8], in medicine [9], and biology [10]. Since Si has been preferentially used in microelectronics up to now, the presence of zinc and ZnO NPs in a Si substrate causes special i
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