Structure of Cu Ions in (Cu + Halogen or Chalcogen)-Ion Implanted Silica Glasses
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Structure of Cu Ions in (Cu + Halogen or Chalcogen)-Ion Implanted Silica Glasses Kohei Fukumi, Akiyoshi Chayahara, Hiroyuki Kageyama, Naoyuki Kitamura, Kohei Kadono, Atsushi Kinomura, Yoshiyuki Mokuno, Yuji Horino and Junji Nishii National Institute of Advanced Industrial Science and Technology, Kansai Center, 1-8-31, Midorigaoka, Ikeda, Osaka, 563-8577 Japan ABSTRACT Structure of Cu ions in (Cl+Cu)-, (Br+Cu)-, (I+Cu)-, (S+Cu)- and (Se+Cu)-ion implanted silica glasses has been studied by x-ray absorption and optical absorption spectroscopies. Cu ions formed Cu-O bonds in the as-implanted glasses, due to the homogeneous distribution of Cu ions and the low local concentration of halogen and chalcogen ions in silica glass. Heat treatment at about 600oC caused the formation of bonds between Cu ions and halogen/chalcogen ions without forming Cu halide or chalcogenide crystals. It was deduced that the formation of these bonds was controlled by the diffusion of Cu ions in silica glass. On the other hands, it was inferred that the formation of Cu halide and chalcogenide crystals was controlled not only by the diffusion of halogen/chalcogen ions but also by the diffusion of matrix ions. INTRODUCTION Nano-sized particles of various compound crystals have been synthesized in silica glass by implantation of two kinds of ions [1-6]. The coordination structure of implanted ions and the formation process of compound crystals have not, however, been studied well yet. In the present study, the coordination structure of Cu ions has been studied in (Cl+Cu)-, (Br+Cu)-, (I+Cu)-, (S+Cu)- and (Se+Cu)-ion implanted silica glasses, in order to elucidate the reaction process between two kinds of implanted ions in silica glass. Since reactions in solid are controlled by mass transport (diffusion) [7], the formation process has been discussed from the view point of mass transport. EXPERIMENTAL DETAILS (6x10163.5MeV Cl2+ions cm-2 + 6x10163.5MeV Cu2+ions cm-2)-, (6x10162.4MeV Br2+ions cm-2 + 6x10162.0MeV Cu+ions cm-2)-, (6x10163.5MeV I2+ions cm-2 + 6x10162.0MeV Cu+ions cm-2)-, (3x10161.2MeV S+ions cm-2 + 6x10162.0MeV Cu+ions cm-2)- and (3x10162.3MeV Se+ions cm-2 + 6x10162.0MeV Cu+ions cm-2)-implanted silica glasses were prepared. Halogen (Cl2+, Br2+, I2+) or chalogen (S+, Se+) ions were implanted in silica glass plates (Yamaguchi Nippon Silica Glass Co.Ltd., direct method, type III, OH content=ca.1000ppm) at room temperature with an NT-1500 tandem type accelerator (Nisshii High Voltage Co. Ltd.), followed by Cu+ or Cu2+ ion implantation. The distributions of implanted ions calculated from TRIM code are shown in table I. 5x10162MeV Cu+ions cm-2-implanted silica glass was also prepared for comparison. Then, these glass plates were cut into several pieces and were heat-treated in air. Optical absorption spectra of the as-implanted glasses and the heat-treated glasses were
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measured at room temperature with a U-4000 spectrophotometer (Hitatchi). X-ray absorption spectra of ion-implanted glasses were measured around Cu K-absorption e
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