Study and optimization of the photoluminescence of amorphous silicon carbide thin films
- PDF / 1,572,795 Bytes
- 12 Pages / 432 x 648 pts Page_size
- 85 Downloads / 188 Views
MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.1
Study and optimization of the photoluminescence of amorphous silicon carbide thin films Maricela Meneses1, Mario Moreno1, Alfredo Morales1,2, Alfonso Torres1, Pedro Rosales1, Israel Vivaldo3 1
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Tonantzintla, Puebla 72840, México.
2
Centro de Investigación en Materiales Avanzados, S.C., CIMAV-Unidad Monterrey, México.
3
Benemerita Universidad Autónoma de Puebla, FCE, BUAP, 72000, México.
ABSTRACT:
In this work we report the study of the effect of the deposition parameters on the photoluminescence (PL) intensity of hydrogenated amorphous silicon-carbide (a-SiC:H) films deposited at very low temperature (150 °C) by Plasma Enhanced Chemical Vapor Deposition (PECVD). We have observed that the main deposition parameter that influences the wavelength emission peak is the methane/silane (CH4/SiH4) ratio used for the films deposition, due to a change on the film carbon content. On the other hand the deposition RF power affects the PL intensity, without a change in the PL emission peak. Also we have studied the effect of the film thickness on the PL intensity and we have observed an optimal film thickness.
INTRODUCTION Currently the development of optoelectronic devices is already possible in silicon-based materials, such as light emitting diodes, solar cells, photodiodes and moreover these are produced by techniques compatible with silicon microelectronics fabrication processes [1]. Also there is a constant research on the development of silicon compatible materials for light emission applications, after that porous silicon showed emission [2]. Silicon-based materials as porous Si (PSi) [3], silicon oxycarbide (SiCO) [4] and silicon carbide (SiC) are characterized by a wide band gap, although SiC is
Downloaded from https://www.cambridge.org/core. Iowa State University Library, on 21 Jan 2019 at 16:26:20, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/adv.2019.1
becoming a promising candidate for short wavelength light emitters [5]. Some authors have shown that optical emission in the visible spectra can be achieved through a combination of the wide band gap property and quantum confinement effects observed in nanocrystalline SiC (nc-SiC). Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) has attracted attention since it has shown high levels of photoluminescence (PL) and moreover, the optical, electrical and structural, properties of this material can be controlled by the carbon, silicon and hydrogen content in the films. The optical band gap which is related to its light emission can be controlled by the carbon content in the films [6]. Several techniques such as plasma enhanced chemical vapor deposition (PECVD), evaporation, sputtering and laser ablation have been employed for its deposition [7-9]. The PECVD technique has the advantage of low temperatures deposition (< 300°C) without the necessity of ther
Data Loading...
