Study of Gold Thin Films Evaporated on Polyethylene Naphthalate Films toward the Fabrication of Quantum Cross Devices
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1025-B07-01
Study of Gold Thin Films Evaporated on Polyethylene Naphthalate Films toward the Fabrication of Quantum Cross Devices Hideo Kaiju, Akito Ono, Nobuyoshi Kawaguchi, Kenji Kondo, and Akira Ishibashi Laboratory of Quantum Electronics, Research Institute for Electronic Science, Hokkaido University, Sapporo, 060-0812, Japan
ABSTRACT We have studied Au thin films evaporated on polyethylene naphtalate (PEN) organic substrates as a function of Au thickness < ~20 nm and discussed its feasibility toward metal/insulator hybrid materials used for quantum cross devices using atomic force microscope. The Au grain size increases from 28.0 4.6 nm to 48.5 11.4 nm with increasing the Au thickness from 6.9 to 20.8 nm and it denotes that the Au grain size is larger than its Au-thickness size, respectively. The surface roughness of Au films of sub-15-nm thickness, in the scanning scale of the Au-thickness size, is less than 0.9 nm, corresponding to 4-5 atomic layers. These experimental results indicate that Au thin films on PEN substrates are suitable for possible metal/insulator hybrid materials to be used in quantum cross devices.
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INTRODUCTION Molecular electronic devices continue to be pursued as a technology that offers the prospect of scaling device dimensions down to a few nanometers and also promote a practical introduction to high-density memory applications [1,2]. One of the several molecular devices is a cross-bar memory device fabricated by nanoimprint lithography, which has achieved the production of 30-nm half-pitch patterning [3,4]. On the other hand, the patterning technology using optical lithography, such as ultraviolet (UV) optical lithography based on immersion lens and extreme ultraviolet (EUV) optical lithography including vacuum operation and multilayer coated reflective optics, has achieved its long-term success and especially EUV optical lithography using a wavelength of 13.5 nm has enabled the printing of nearly 27-nm half-pitch lines [5-8]. However, today’s production procedures such as nanoimprint lithography, optical lithography, and electron-beam lithography, do not allow for the resolution to achieve sub-20-nm line-width structures. Recently, we have proposed a double nano-“baumkuchen” (DNB) structure, composed of two thin slices of alternating metal/insulator nano-“baumkuchen” as a lithography-free nanostructure fabrication technology [9,10]. The schematic illustration of the fabrication procedure is shown in Fig. 1. First, the metal/insulator (organic films) spiral heterostructure is fabricated using a vacuum evaporator including a film-rolled-up system. Then, two thin slices of the metal/insulator nano-“baumkuchen” are cut out from the metal/insulator spiral heterostructure. Finally, the two thin slices are attached together face to face, given that each stripe is crossing, in a highly clean environment [11,12]. The DNB has potential application in high-density memory devices, the cross point of which can be scaled down to ultimate feature sizes of a few nanometers thanks to the film
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