Study of Ion Beam Mixing by x ray reflectometry
- PDF / 187,057 Bytes
- 6 Pages / 432 x 648 pts Page_size
- 5 Downloads / 212 Views
Study of Ion Beam Mixing by x ray reflectometry D Simeone1,3, D Gosset1,3, L. Luneville2,3, G Baldinozzi3,1, N Moncoffre4, C. Deranlot5 1
CEA/DEN/DANS/DMN/SRMA/LA2M-MFE, CEA-CNRS-ECP, CE Saclay, Gif sur Yvette, 91191, France 2 CEA/DEN/DANS/DM2S/SERMA/LLPR-MFE, CEA-CNRS-ECP, CE Saclay, Gif sur Yvette, 91191, France 3 CNRS/ECP/SPMS-MFE, CEA-CNRS-ECP, SPMS, ECP, Chatenay-Malabry, 92292, France 4 Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL), 4 rue Enrico Fermi, F-69622 Villeurbanne cedex, France 5 Unité Mixte de Physique CNRS/Thales, Campus de Polytechnique, 1 Avenue A. Fresnel, 91767 Palaiseau Cedex, France and Université Paris-Sud 11, 91405 Orsay, France
ABSTRACT We present in this text a new experimental tool to study the mixing of atoms under irradiation. Based on physics of x ray diffraction, the specular reflectivy of x ray was used to estimate the Auto Correlation Function associated with the electron density gradient. The accuracy of the ACF is around 1 nanometer and does not evolve with the thickness of the probed layer. Thus, this point allows accurately measuring the broadening of the electron density gradient spreading induced by irradiation. Such an accurate profile extracted over a large range of fluences (about 3 decades) would lead to the determination of the functional dependence of this spreading with the fluence. This could allow pointing out the main mechanisms triggering the atomic mixing over large distances when atomic mixing occurring in thermal spikes is washed out. INTRODUCTION Ion solid interaction is of significant interest to both academic and industrial researchers [1,2] In particular, ion solid interaction is relevant to many applications in corrosion resistance, adhesion, and structural stability of materials under irradiation[1]. Ion implantation revolutionized the microelectronic industry offering a control over the number and depth of doping atoms in semiconductor materials [3,4]. Nowadays, the development of high current and high voltage implanters allows not only to deposit a small amount of impurity atoms but also to tailor buried new compound layers using high fluence implantations [4]. The migration of atoms occurring during the ion beam mixing is of paramount importance to investigate phase stability and new properties of these compounds [5]. The Molecular Dynamics method has been extensively used to describe the diffusion of atoms in displacement spikes forming the displacement cascades [5,6]. However, an MD simulation of such displacement cascades initiated by high energy particles (above a few tens of keV) is very time consuming. This point explains why the analysis of the first steep of radiation damages in solids induced by high energy
179
(above few tens of keV) ions is up to now out of reach of MD simulations [5]. The binary collision approximation thus remains a useful theoretical framework to study the ion beam mixing created by implantation [3,4]. Many models first developed in the 1980s by Sigmund and Gr
Data Loading...
