Study of the Effect of Low-Energy Irradiation with O 2+ Ions on Radiation Hardening and Modification of the Properties o
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Study of the Effect of Low‑Energy Irradiation with O2+ Ions on Radiation Hardening and Modification of the Properties of Thin TiO2 Films A. Kozlovskiy1,2 · D. Shlimas1,2 · I. Kenzhina1,2 · O. Boretskiy3 · M. Zdorovets1,2,4 Received: 4 July 2020 / Accepted: 13 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The paper presents the results of a systematic study of the effect of exposure to low-energy O2+ ions on the structural, optical, mechanical properties, as well as resistance to degradation and aging of thin T iO2 films. The studied samples were obtained using the magnetron sputtering method; the film thickness was 600 nm. Atomic force and scanning electron microscopy, energy dispersive analysis, X-ray diffraction, and UV–Vis spectroscopy were used as the main research methods. In the course of the results, dose dependences of changes in the properties of thin films were established, and it was also shown that irradiation leads to an increase in hardness and resistance to cracking due to radiation hardening. A decrease in the band gap from 3.61 to 3.43 eV not only changes the optical properties, but also has a significant effect on the change in the conductivity. The novelty and relevance of this study lies not only in obtaining new data on the effect of ionizing radiation on the properties of thin films, but also in expanding the prospects for the use of ion irradiation for the purpose of radiation hardening and modification of new materials. Keywords Thin films · Radiation modification · Hardness · Band gap · TiO2
1 Introduction To date, interest in group IV-VI semiconductor thin films (ZnO, CdSe, T iO2, CdTe, S nO2) [1–4] is due to their structural properties, as well as a sufficiently small band gap of 2.5–4.0 eV, which makes them one of the most promising materials as photocatalysts [5, 6], alternative power supplies and batteries [7–9], biomedicine and pharmaceuticals [10, 11]. At the same time, a huge amount of scientific research is aimed at studying the possibility of changing the properties of thin films in order to increase the efficiency of their use. The greatest progress in this direction is associated with the effects of doping thin films with various elements including rare earths [12–16]. The basis * A. Kozlovskiy [email protected] 1
The Institute of Nuclear Physics, Almaty, Kazakhstan
2
L.N. Gumilyov, Eurasian National University, Nur‑Sultan, Kazakhstan
3
Al-Farabi Kazakh National University, Almaty, Kazakhstan
4
Ural Federal University, Yekaterinburg, Russia
of this method is the use of various precursors, which are dopants, and their addition either in the initial solutions or in the process of spraying. In most cases, this technique leads to unique results in increasing the efficiency of using semiconductor films in photocatalysis by increasing not only photocatalytic activity, but also recycling [17, 18], in biomedicine by increasing antibacterial properties [19], increasing anticorrosion properties and strength charac
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