Study of the optical and gas sensing properties of In 2 O 3 nanoparticles synthesized by rapid sonochemical method
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Study of the optical and gas sensing properties of In2O3 nanoparticles synthesized by rapid sonochemical method Hafeez Ullah1,* Kashif Safeen4
, Zain H. Yamani2, Ahsanulhaq Qurashi2,5, Javed Iqbal3, and
1
Institute of Physics & Electronics, Gomal University, Dera Ismail Khan 29220, KP, Pakistan Center of Excellence in Nanotechnology (CENT), KFUPM, Dhahran 31261, Saudi Arabia 3 Laboratory of Nanoscience and Technology (LNT), Department of Physics, Quaid-I-Azam University Islamabad, Islamabad, Pakistan 4 Department of Physics, Abdul Wali Khan University Mardan, Mardan, Pakistan 5 Department of Chemistry, Khalifa University, Abu Dhabi 127788, United Arab Emirates 2
Received: 25 February 2020
ABSTRACT
Accepted: 19 August 2020
Indium oxide (In2O3) nanoparticles were synthesized via a facile rapid sonochemical method. Detailed spectroscopic techniques were used to investigate optical, structural and chemical properties of the synthesized In2O3 nanoparticles. The structural analysis shows that In2O3 nanoparticles have cubic structure and are polycrystalline in nature. The morphology of the In2O3 nanoparticles examined by field emission scanning electron microscopy revealed spherical and uniformly distributed particles. Bruno emit Teller surface analyzer demonstrated that the surface areas of In2O3 nanoparticles is 45 m2/g and also confirmed that the synthesized nanoparticles are mesoporous. Raman spectra also revealed that the synthesized nanoparticles have cubic structure. In–O band stretching of the synthesized In2O3 nanoparticles was confirmed using Fourier Transform Infrared Spectroscopy. Photoluminescence spectra of the In2O3 nanoparticles showed broad and intense UV emission peak at 358 nm. Moreover, the synthesized In2O3 nanoparticles showed good sensitivity and fast response toward the hydrogen gas at lower temperature.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Nanostructure semiconducting materials demonstrate very interesting chemical, optical properties compared to those of bulk materials. These
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https://doi.org/10.1007/s10854-020-04303-9
nanostructures semiconductor materials exhibit extraordinary properties towards the novel devices [1]. In last decade, various type of nanostructures were synthesized to optimize different kinds of properties such as chemical, electrical and optical
J Mater Sci: Mater Electron
properties of these nanostructure materials. In2O3 has a wide band gap (3.6 eV) n-type semiconductor having large applications in many fields including solar cell, gas sensor, field emission display, biosensor, optoelectronics and photo catalysis [2–8]. Various chemical and physical vapor deposition techniques including sol gel, co precipitation, pulse laser depositions, thermal evaporation and sputtering have been used for the preparation of Indium oxide nanostructure. However, these techniques involved complicated procedure, deployed expansive equipments and required high energy for opera
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