Superconducting Microstructures with High Impedance
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Superconducting Microstructures with High Impedance K. V. Sheina, A. A. Zarudnevaa, V. O. Emel’yanovaa, M. A. Logunovaa, V. I. Chichkovb, A. S. Sobolevc, V. V. Zav’yalova, d, J. S. Lehtinene, f, E. O. Smirnovg, Yu. P. Korneevag, A. A. Korneevg, a, and K. Yu. Arutyunova, d, * a “Higher
School of Economics” National Research University, Moscow, Russia National University of Science and Technology “MISIS”, Moscow, Russia c Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia d Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow, Russia e VTT Technical Research Centre of Finland, Espoo, 02150 Finland f Department of Physics, University of Jyvaskyla, PB 35, Jyvaskyla, FI-40014 Finland g Moscow Pedagogical State University, Moscow, Russia *Е-mail: [email protected] b
Received March 26, 2020; revised March 26, 2020; accepted April 2, 2020
Abstract—The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. Keywords: superconductivity, thin films, kinetic inductance, tunneling contacts, high impedance DOI: 10.1134/S1063783420090280
1. INTRODUCTION Deceleration in growth of level of integration of commercial micro- and nanoelectronic devices, formally signifying failure of the Moore’s law [1], is evidenced in recent years. Two reasons can be given for this: large heat dissipation per unit volume (or per unit area) and various quantum-size effects. The comprehensive solution to the first problem can be the transition from the normal metals or semiconductors to superconducting materials, in critical elements of circuit. In line with this simplistic approach, use of superconducting RSFQ (rapid single flux quantum) logic makes it possible not only to significantly reduce the energy consumption but also to achieve the operation speed exceeding hundredfold the standard solutions based on CMOS (complementary metal-oxide semiconductor) technologies [2]. It is expected that the element base of quantum computers can also be constructed with use of superconducting materials. One of the factors constraining the operation speed of superconducting nanoelectronic devices is their high kinetic inductance. However the effect of kinetic inductance can be useful in a number of applications. The interest in the physics of quasi-one-dimensional superconductors [3], in which fluctuations of the order parameter Δ = |Δ|eiφ can be important, has been increased in recent years. More specifically, it was
shown that specific manifestation of quantum fluctuations—quantum phase slip—is the process dual to Josephson tunnel
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