SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film T

  • PDF / 1,109,252 Bytes
  • 6 Pages / 432 x 648 pts Page_size
  • 0 Downloads / 143 Views

DOWNLOAD

REPORT


MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.423

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors G. Kitahara,1,2 K. Aoshima,1,2 J. Tsutsumi,2 H. Minemawari,2 S. Arai,1 and T. Hasegawa1,2 1

Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan

ABSTRACT

Recently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPRNaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

INTRODUCTION Considerable recent attention has been paid to developing printing-based device production (or printed electronics, PE) technologies, as they are expected to provide great advantages in the manufacture of large-area, flexible, and lightweight electronics products [1-3]. Active matrix OTFTs are the most important target for the PE technologies, because they are the most fundamental components that allows versatile uses in manufacturing displays, electronic papers, or two-dimensional sensor arrays [4]. In order to manufacture the printed OTFTs, there is a need to produce and stack fine metal electrodes and gate dielectric layers by printing technologies, in addition to the printed organic semiconductor layers. Recently, a groundbreaking printing technique, which is called “SuPR-NaP”, has been developed for producing patterned printed silver electrodes on an insulating

Downloaded from https://www.cambridge.org/core. Access paid by the UCSB Libraries, on 14 May 2018 at 13:09:11, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/adv.2018.423

polymer layer [5]. The technique is based on unique chemisorption effect of silver nanoparticles (AgNPs) and is composed of a simple two-step process: a patterned activated surface is first fabricated by masked vacuum ultraviolet light (VUV) irradiation on a perflu