Surface modification of aluminum and chromium by ion implantation of nitrogen with a high current density ion implanter
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Surface modification of aluminum and chromium by ion implantation of nitrogen with a high current density ion implanter and plasma-source ion implantation Zoran Falkenstein,a) Kevin C. Walter, Michael A. Nastasi, and Donald J. Rej Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, New Mexico 87545
Nikolai V. Gavrilov Institute of Electrophysics, Ural Division of the RAS, 620049 Yekaterinburg, Russia (Received 22 February 1999; accepted 11 August 1999)
Results of ion implantation of nitrogen into electrodeposited hard chromium and pure aluminum by a high-dose ion-beam source are presented and compared to plasma-source ion implantation. The large-area, high current density ion-beam source can be characterized, with respect to surface modification use, by a uniform emitted dose rate in the range of 1016 to 5 × 1017 N cm−2 min−1 over an area of
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