Surface Properties Reversibly Switched Using Electrical Potential
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March 11 issue of Chemistry of Materials, Y. Shirota and co-workers from Osaka University in Japan reported the synthesis and properties of a novel class of highperformance, color-tunable emitting amorphous molecular materials with bipolar characters: 4-dimesitylboryl-N,N-bis(9,9dimethylfluoren-2-yl)aniline (FlAMB-0T); 2-{4-[bis-(9,9-dimethylfluoren-2yl)amino]phenyl}-5-(dimesitylboryl) thiophene (FlAMB-1T); 2-{4-[bis-(9,9dimethylfluoren-2-yl)amino]phenyl}-2’dimesitylboryl-5,5’-bithiophene (FlAMB2T); and 5-{4-[bis(9,9-dimethylfluoren-2yl)amino]phenyl}-5”-dimesitylboryl2,2’:5’,2”-terthiophene (FlAMB-3T). The molecular design of these materials is based on connecting both electrondonating and electron-accepting moieties (which undergo reversible oxidation and reduction) through a central π-conjugated system. In other words, the incorporation of the difluorenyl(phenyl)amine and dimesitylboron moieties provide both electron-donating and electron-accepting properties, respectively, and facilitated formation of amorphous glasses due to their nonplanar molecular structures. The central thiophene rings control the highest occupied and lowest unoccupied molecu-
lar orbital energy levels, depending on the material’s π-conjugation length. The researchers reported that emission color can be tuned by varying the conjugation length of the thiophene unit. The researchers reported the fabrication of electroluminescent devices using FlAMBnT as emitting or host materials and the development of a high-performance whitelight-emitting electroluminescent device using a bilayer combination of FlAMB-0T and FlAMB-3T. ANDREI A. ELISEEV
Surface Properties Reversibly Switched Using Electrical Potential A research team from the Massachusetts Institute of Technology (MIT), the University of California at Santa Barbara (UCSB), and UC—Berkeley have developed a process that dynamically changes interfacial properties by conformational transitions, or switching, of surface-confined molecules. Unlike other methods that involve chemical reactions, the team has demonstrated the ability to use an active stimulus, such as an electrical potential, to effect such changes without altering the system’s environment.
10th International Conference on Defects—Recognition, Imaging and Physics in Semiconductors (DRIP X) September 29 – October 2, 2003 Les Salines Holiday Village in Batz-sur-Mer (near Nantes, France)
ANNOUNCEMENT AND CALL FOR PAPERS The purpose of DRIP X is to provide an opportunity for scientists and engineers from both the academic sphere and industry to meet together for an efficient scientific exchange on the topics related to the different methods and techniques used for the recognition, imaging and analysis of defects in semiconductor materials and devices.
Conference Themes • • • • • • • •
Nano and atomic scale defect assessment, near field probe methods Submicron far field optical imaging, spectroscopy Electrical and transport characterization Electron beam methods and x-ray based mapping techniques Defect mapping over large area wafers
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