Surfactant Templated Assembly of Hexagonal Mesostructured Semiconductors Based on [Ge 4 Q 10 ] 4- (Q=S, Se) and Pd 2+ an
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Surfactant Templated Assembly of Hexagonal Mesostructured Semiconductors Based on [Ge4Q10]4- (Q=S, Se) and Pd2+ and Pt2+ ions. Pantelis N. Trikalitis, Krishnaswamy K. Rangan and Mercouri G. Kanatzidis* Department of Chemistry, Michigan State University, East Lansing, MI 48824. ABSTRACT Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4(Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt 2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8
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