Synthesis and characterization of single-crystal indium nitride nanowires
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Bin Chen and Jie Han Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, California 94035
M. Meyyapan NASA Ames Research Center, Moffett Field, California 94035 (Received 18 June 2003; accepted 21 November 2003)
InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 m/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.
Nanostructured semiconducting III-V nitrides have long been viewed as promising materials for electronic and optoelectronic applications.1 Among them, InN is particularly interesting because of its direct bandgap of 1.89 eV, which offers enormous promise for applications in photonic devices such as lasers, light emitting diodes in visible light range, and high-efficiency solar cells.2 Furthermore, InN has distinct advantages over GaN for high-frequency field-effect transistor applications because of its superior transport characteristics.3 InN nanostructures such as nanowires are therefore particularly tantalizing due to the potential of integrating the abovementioned properties with various quantum effects. However, unlike the intensive effort spent on GaN nanowires,4 the study of InN has not reached the same extent due to its low dissociation temperature, making the synthesis of high-quality InN nanowires very difficult. This is evident in the scarce report on InN nanowire synthesis. Zhang et al.5 reported synthesis of InN nanowires using a vapor-solid approach without any catalyst; however, this approach yielded inhomogeneous nanowires with a broad diameter distribution of 10–100 nm. InN nanowires have also been synthesized via a vaporliquid-solid (VLS) approach using a single-zone furnace at 500 °C,6 and a diameter distribution from 40 to 80 nm was obtained. This lack of precise diameter control
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Address all correspondence to this author. e-mail: [email protected] J. Mater. Res., Vol. 19, No. 2, Feb 2004
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shared by those two synthesis techniques5,6 poses a great threat to electronic and optoelectronic applications of InN nanowires. In addition, one drawback of the reported VLS approach6 is the slow growth rate, as 8 h was used for producing micro-long nanowires. This severely hinders the synthesis of bulk-quality InN nanowires and is likely limited by the inefficiency in breaking NH3 molecules at the relatively low synthesis temperatures used. Moreover, studies on the electronic properties of InN nanowires ha
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