Synthesis and opto-electrical properties of Cu 2 NiSnS 4 nanoparticles using a facile solid-phase process at low tempera
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Vol.16 No.6, 1 November 2020
Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature* LI Shi-na (ᵾ༛၌)1, MA Rui-xin (傜⪎ᯠ)2**, and NIU Jian-wen (⢋ᔪ᮷)2 1. Tianjin Research Institute for Water Transport Engineering, Ministry of Transport, Tianjin 300000, China 2. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, China1 (Received 7 November 2019; Revised 25 March 2020) ©Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Cu2NiSnS4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu2NiSnS4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu2NiSnS4 nanoparticles were studied at various temperature. The results showed that the Cu2NiSnS4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells. Document code: A Article ID: 1673-1905(2020)06-0401-4 DOI https://doi.org/10.1007/s11801-020-9188-9
The Cu2ZnSnS4 (CZTS) semiconductor compounds are one of the most promising candidates for thin film photovoltaic applications[1,2]. The earth-abundant quaternary semiconductor CZTS is a p-type semiconductor with a band gap of 1.45—1.6 eV, which approaches the optimum value for solar photoelectric conversion and the CZTS exhibits a high absorption coefficient of 104 cm-1 in the visible region[3-5]. Recently, Cu2(Mn, Fe, Co, Ni, Cd)S4 chalcogenide semiconductor materials have received intense interest, because their chemical structure is analogous to CZTS, and these materials are composed of abundance elements, high absorption coefficients and good photoelectric properties for potential commercial application[6-14]. However, there have been few literature reports of the synthesis of Cu2NiSnS4 and its photoelectric properties. Cui Y et al[6] reported on the successful preparation nail-like Cu2NiSnS4 nanocrystals with wurtzite structure by a solvothermal methodˈand found that the band gap in the visible light region was 1.49 eV. Wang T X et al[15] reported the preparation of cubic Cu2NiSnS4 nanoparticles with the band gap of 1.41 eV by a simple solvothermal. Because of a longer reaction time of solvothermal method, Kamble A et al[16] used a hot injection process to prepare the wurtzite structure of Cu2NiSnS4 nanoparticles with the band gap of 1.38 eV and a good photoresponsive behavior. Sarkar S et al[17] prepared Cu2NiSnS4 nanoparticles by an environment-friendly hydrothermal route employing water as the
medium. They found that the Cu2NiSnS4 was a p-type semiconductor with a band gap of 1.56 eV and the thermoelectric prope
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