Synthesize of Metal-semiconductor Segmented Nanowire by Electrodeposition
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1206-M16-20
Synthesize of metal-semiconductor segmented nanowire by electrodeposition
Hyeonjin Eom and Bongyoung Yoo Department of materials and bio nano science and engineering, University of Hanyang at Ansan, 1271 Sa-3 dong, Sangnok-gu, Ansan, Kyeonggi-do, 425-791, Republic of Korea
ABSTRACT Metal-semiconductor segmented nanowire was synthesized to increase the thermopower factor with enhancing electrical conductivity by inserting metal. Various electrodeposition were performed to fabricate metal-semiconductor (Ag-BiTe) segmented nanowire structure. Metalmetal (Ag-Ni) segmented structure was fabricated by electrodeposition in dual bath and semimetal segmented nanowire structure was fabricated by galvanic-displacement electrodeposition with metal-metal segmented structure. The morphology and structural characteristics of these various segmented nanowire were investigated to understand the possibility of this segmented nanowire as a thermoelectric material.
INTRODUCTION Recently, thermoelectric (TE) is ignited by enhancement of nano-science and engineering that uncovers the possibility of increasing of figure of merit (ZT). As a candidate for thermoelectric materials, metal could not be considered because of their high thermal conductivity. according to other research, it is feasible to decrease thermal conductivity of also metal without much degradation of the electrical conductivity [1,2], which strongly implies that nanoscale metal can be utilized to improve thermoelectric properties of devices, especially power factor. Semiconductor-semiconductor superlattice nanowire structure has been studied as one of the best candidates for thermoelectric devices [3,4], because of their photon scattering characteristics at the interfaces. In this research, instead of semiconductor-semiconductor superlattice structure, metal-semiconductor segmented structure was synthesized, and its microstructure and electrical properties are investigated. With this structure, improvement of electrical conductivity as well as degradation of thermal conductivity with phonon scattering would be anticipated. Metal-semiconductor segmented nanowires were acquired with electrochemical displacement method, which can exchange the material which has low reduction potential with more noble materials in aqueous electrolyte. To achieve this, Ni-Ag segmented structure was firstly prepared as metal-metal segmented structure. The dual electrolytes were used for the electrodeposition to synthesis of Ni-Ag segmented nanowires. After acquiring Ni-Ag segmented nanowire structure, we synthesized the metal-semiconductor segmented nanowire (Ag-BiTe segmented nanowire) by using galvanic-displacement method.
I. Metal-metal segmented nanowire structure
EXPERIMENT In the previous study, we have studied about electrodeposited NiAg film which contains various effects when electrodeposition was performed. Because each metal has different standard reduction potential (E0), various composition distribution could be gained with each different applied over-potential.
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