Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes
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C5.5.1
Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes Antonino La Magna1, Paola Alippi1, Vittorio Privitera1, Guglielmo Fortunato2, MarcoCamalleri3 and Bengt Svensson4 1
CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy CNR-IFN Sezione Roma, Via Cineto Romano 42, 00156 Rome Italy 3 STMicroelctronics Stradale Primosole 50, I-95121 Catania, Italy 4 Department of Phisics University of Oslo, 1048 Blindern N-0316 Olso, Norway 2
ABSTRACT The simulation of laser annealing, applied to the formation of ultra-shallow junctions in Si, is discussed. Our effort is developing tools capable to aid the process integration issue. The numerical approach deals with a double problem: 1) the interaction between the irradiated transistor structure and the laser light, 2) the non-equilibrium evolution of the thermal field, molten regions and dopant density. Here we present a complete methodology: the calculated heat source distribution, induced by the irradiation, is used as input of a phase-field approach for the simulation of the thermal phase and impurity fields. We solved numerically the phase field equations in two dimensional structures, considering as an initial status the generic material modification due to an ion implant process. We present various simulation results obtained in MOS structures with different geometry. With the support of the simulation results we discuss the problematic and the perspectives of the excimer laser annealing process application in the fabrication of MOS devices. INTRODUCTION The integration of non-conventional processes allowing the activation without diffusion of dopant profile especially in the source/drain extension of Complementary Metal Oxide Semiconductor (CMOS) devices is one of the main challenge for the 21st century nanoelectronics technology. This issue is architecture independent since it emerges also when alternative device geometry are taken into account. Among the possible solutions, the use of Excimer Laser Annealing (ELA) process is maybe the one presenting the best potential performances and the most critical integration issue [1,2]. The integration complexity is mainly due to the poor control of the irradiation effects in the whole CMOS structure. Of course the lack of suitable computational tools is detrimental to the process technology design. In order to solve some aspects of the ELA integration issue these tools should predict both the material modifications than the dopant redistribution caused by the ELA. A complete Technology Computer Aided Design (TCAD) code, simulating the ELA process, should numerically solve two coupled problems: a) the laser light scattering in order to estimate the heat source distribution, b) the material modification caused by the annealing due to these heat sources.
C5.5.2
In this paper we report the implementation of this codes. We simulate the interaction between the electromagnetic field and the structures using a Finite Difference Time Domain (FDTD) approac
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