Terahertz Detectors Based on Silicon Technology Field Effect Transistors
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Terahertz Detectors Based on Silicon Technology Field Effect Transistors Wojciech Knap1, Franz Schuster1,2, Dominique Coquillat1, Frédéric Teppe1, Benoît Giffard2, and Dmytro B. But1,3, Oleksander G. Golenkov3, Fedor F. Sizov3 1
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France 2 CEA-LETI, MINATEC Campus, 38054 Grenoble, France 3 Institute of Semiconductor Physics, 41 Nauki Ave., 03028 Kiev, Ukraine ABSTRACT The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including onchip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ~0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging. INTRODUCTION The terahertz (THz) spectrum covers a frequency spectrum from the far-IR (Infra-Red) region to the mid-IR region (center frequency between 100 GHz and 10 THz). Terahertz systems and technology have become of large interest over the last 10 years. For example, THz rays are nonionizing and present an alternative to X-rays technologies as many materials (plastics, cloths, paper-boards, etc.) are also transparent and in THz spectrum. Among the number of various detectors proposed and realized for THz spectral region in recent two decades. Today, there exist quite a lot of different types of THz/ sub-THz detectors, the most sensitive ones are deeply cooled to cryogenic or sub-K operation temperatures [1]. Most of uncooled THz detectors are not sensitive enough or are not capable for integration into arrays to be used, e.g. in real time vision systems. In order to be widely used in THz technologies, the detectors should be not only sensitive but also capable for integration into arrays with readout electronics. THz detection by Si field effect transistors (FETs) offers the advantages of room temperature operation, together with an easy on-chip integration with amplifying and read-out electronics and high reproducibility. The first demonstration of the THz broadband detection by Si CMOS FETs was made by Knap et al. [2] in 2004 and Tauk et al in 2006 [3]. The first focal plane arrays in silicon technology have been designed for imaging at 300 GHz and 600 GHz by Schuster et al
[4, 5] Luisauskas et al [6] and Öjefors et al. [7]. In this wo
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