TFET Integrated Circuits From Perspective Towards Reality
This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this w
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grated Circuits From Perspective Towards Reality
TFET Integrated Circuits
Navneet Gupta • Adam Makosiej • Amara Amara Andrei Vladimirescu • Costin Anghel
TFET Integrated Circuits From Perspective Towards Reality
Navneet Gupta Institut Supérieur d’Électronique de Paris Paris, France Amara Amara Institut Supérieur d’Électronique de Paris Paris, France
Adam Makosiej Commissariat ‘a l’Énergie Atomique et aux Énergies Alternatives Grenoble, France Andrei Vladimirescu Institut Supérieur d’Électronique de Paris Paris, France
Costin Anghel Institut Supérieur d’Électronique de Paris Paris, France
ISBN 978-3-030-55118-6 ISBN 978-3-030-55119-3 (eBook) https://doi.org/10.1007/978-3-030-55119-3 © Springer Nature Switzerland AG 2021 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors, and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Switzerland AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
State-of-the-Art TFET Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1 TFET Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2 Silicon TFET Device TCAD and SPICE Models . . . . . . . . . . . . . . . . . . . . . 2.3 TFET Power and Delay Comparison with CMOS . . . . . . . . . . . . . . . . . . . .
5 5 8 11
3
SRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2 TFET SRAMs - State of the Art. . . .
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