The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
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Internet Journal of Nitride Semiconductor Research:
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The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano and K. Oki MRS Internet Journal of Nitride Semiconductor Research / Volume 2 / January 1997 DOI: 10.1557/S1092578300001320, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001320 How to cite this article: K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano and K. Oki (1997). The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization . MRS Internet Journal of Nitride Semiconductor Research, 2, pp e6 doi:10.1557/S1092578300001320 Request Permissions : Click here
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Internet Journal o f
Nitride S emiconductor Research
Volume 2, Article 6
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization K. Hiramatsu Mie University Y. Kawaguchi, M. Shimizu, N. Sawaki Nagoya University T. Zheleva, Robert F. Davis North Carolina State University H. Tsuda, W. Taki, N. Kuwano, K. Oki Kyushu University This invited article was received on March 25, 1997 and accepted on May 13, 1997.
Abstract InGaN films have been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy. The "composition pulling effect" during the initial InGaN growth stages has been studied as a function of the lattice mismatch between the InGaN and the underlying epitaxial layer. The crystalline quality of the InGaN is good near the InGaN/GaN interface and the composition is close to that of GaN. However, with increasing InGaN film thickness, the crystal quality deteriorates and the indium mole fraction increases. The composition pulling effect becomes stronger with increasing lattice mismatch. It is suggested that indium atoms are excluded from the InGaN lattice during the early growth stages to reduce the deformation energy from the lattice mismatch. TEM observations of the InGaN/GaN structure reveal that the degradation of the crystalline quality of InGaN films grown on GaN is caused by pit formation which arises from edge dislocations propagating through the InGaN film from the underlying GaN.
1. Introduction High brightness III-V nitride semiconductor blue and green light-emitting diodes (LEDs) have been already put to practical use [1] [2]. Recently, the realization of short wavelength laser diodes (LDs) has been reported [3] [4]. These optoelectronic devices consist of double heterostructures (DH) which include an InGaN active layer sandwiched between GaN and AlGaN cladding layers. As a result, the large lattice mismatch between InGaN/GaN or InGaN/AlGaN could conceivably have a great inf
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