The Fabrication of Semiconductor Nanostructure Arrays on a Silicon Substrate Using an Anodized Aluminum Template
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Mat. Res. Soc. Symp. Proc. Vol. 452 01997 Materials Research Society
(IC) technology, it is desirable to fabricate the nanostructure arrays on a silicon substrate to allow for optoelectronic integration with silicon. In addition, fabrication on a silicon substrate allows the direct use of the well-developed silicon IC process technology. This paper describes the fabrication process for the formation of nanostructure arrays on a silicon substrate, the results of fabrication, and the use of this technology towards a silicon based x-ray detector for digital radiography applications. FABRICATION AND RESULTS The semiconductor nanostructure arrays are fabricated on a p-type silicon wafer with 0.3 K2-cm resistivity. The substrate is first cleaned using a standard silicon cleaning process. Next, a 1 i.rm Al film is sputter deposited on the back side of the wafer and annealed at 4500 C for 30 minutes. Then, a 500 nm 99.999% pure aluminum film is sputter deposited on the polished side of the wafer. This is annealed at 4000 C for 30 minutes in a nitrogen atmosphere to ensure good adhesion of aluminum to the substrate. The top layer was then anodized in Platinum 15% sulfuric acid Cathode for 1 minute at a current constant Inverted top ranging between •- of polyethylene __
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