The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering
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The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering Hong Liu1, Zhaohui Pu1, Zhihong Wang2, Huidong Huang2, Yanrong Li2, Dingquan Xiao1, and Jianguo Zhu1,* 1 Department of Materials Science, Sichuan University, Chengdu, 610064, China 2 School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu, 610054, China ABSTRACT Lanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90°domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity. INTRODUCTION As one of the most important ferroelectric thin films, (Pb,La)TiO3 (PLT) thin films can be used in a wide range of applications, which include uncooled pyroelectric infrared sensors and infrared thermal imaging devices[1~2]. PLT thin films have been produced mainly by sputtering [3], multiple cathode sputtering [4], sol-gel [5], and metal organic chemical vapor deposition (MOCVD) [6]. In these thin film deposition techniques, RF magnetron sputtering offers a significant advantage due to RF magnetron sputtering method has a good compatibility with planar technology of semiconductors for remarkable improvement of the integrated level of sensing array[7]. There are several conventional characterization techniques for ferroelectric domain which include SEM [8], TEM [9], polarized light microscope[10], surface corrosion[11] and powder pattern[12], etc. These techniques have some disadvantages such as complex process of samples preparing, damage of samples and low resolution of domain image, etc. PFM is another approach to investigate domain in ferroelectric films. It don’t need to damage samples to obtain domain images and the corresponding topography of the same region can be simultaneously acquired by atomic force microscopy (AFM). In this paper, Pb0.9La0.1Ti0.975O3 (PLT10) thin films were grown on Pt/Ti/SiO2/Si(100) substrates by using RF magnetron sputtering. XRD was applied to study the phase structure of PLT thin films. PFM observations indicated that nanoscale banded 90°a-c domain structure exists in the PLT thin films. It was found that the PLT films prepared by RF sputtering have good *Corresponding author ：E－mail: [email protected]
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dielectric properties and relatively excellent pyroelectric properties. EXPERIMENTAL DETAILS A conventional mixed oxide technique was used to prepare the PLT ceramic target for sputtering. The start materials were analytically pure o
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