The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD
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The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD
Se-Won Ryu, Do-Hyun Kwon, Sung-Gye Park, and Hyoung-June Kim Dept. of
Metallurgical Engineering and Material Science,
Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
ABSTRACT We propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (㎠/Vs) and on/off current ratio
INTRODUCTION Polycrystalline silicon thin film transistors have been studied extensively because of their high field-effect mobilities for the high resolution active matrix liquid crystal displays (AMLCDs) on large area substrate1∼ 3. However, Low-cost glass substrate for AMLCD can only be made using a low temperature process (
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