The Properties of Silica and Hybrid Nanostructures
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1256-N11-61
The Properties of Silica and Hybrid Nanostructures
Avi Shalav, Taehyun Kim and Robert G. Elliman Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT0200, Australia ABSTRACT SiOx nanowires can be grown via the vapor-liquid-solid growth mechanism using SiO vapor produced during the active oxidation of a Si substrate. The as-grown SiOx nanowire have a range of useful physical properties but can also be used as large surface area substrates for the growth of secondary materials. In this study we report the use of optically active impurities to grow and dope secondary nanowire structures, and the use of simple coating methods to enhance and extend the functionality of these unique nanowire substrates. INTRODUCTION Nanowires are generally grown via the metal-catalyzed vapor-liquid-solid (VLS) mechanism as first described almost half a century ago by Wagner and Ellis [1]. The metal catalyst absorbs gas-phase reactants, becomes supersaturated and results in the nucleation of a secondary solid phase. Once nucleated, the secondary phase grows from the initial precipitate in the form of a wire. Dense networks of silica (SiOx) nanowires can be grown on a Si substrate via the metalcatalyzed VLS using a number of techniques [2]. One of the simplest techniques utilizes the SiO vapor produced during active oxidation of the Si substrate [3, 4]. It is well known that Si undergoes active oxidation, producing SiO vapor, at high temperatures (>1000oC) and low oxygen partial pressures (
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