The role of process temperature on structural, optical, vibrational and electronic environments of thermal chemical vapo
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The role of process temperature on structural, optical, vibrational and electronic environments of thermal chemical vapor‑deposited copper‑doped zinc oxide nanostructured thin films Bibhu P. Swain1 Received: 4 May 2020 / Accepted: 18 July 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Copper incorporated zinc oxide (Cu–ZnO) nanostructure thin films were deposited by using a high-temperature chemical vapor deposition technique at 650–800 °C with Cu and Zn powder in O2 and N2 gas atmosphere. The Cu–ZnO thin films were characterized by AFM, XRD, FTIR, Raman spectroscopy, UV–Vis spectroscopy, and XPS to investigate the structural, vibrational, optical, and electronic environments of Cu–ZnO thin films. The AFM study revealed that nanoparticles of Cu–ZnO films are varied from 225 to 74 nm with increasing process temperature from 650 to 800 °C. The relative intensity of E2(high) phonon increases with increase in the process temperature 650–800 °C. The photoluminescence spectra of Cudoped ZnO films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak centered at 450 nm. The calculated Tauc optical bandgap of Cu–ZnO thin films decreased from 2.72 to 2.22 eV, due to Cu incorporation in ZnO network with the increase with the process temperature. Moreover, the semiempirical electronic environments of Zn 2p3/2, O(1 s), and Cu (2p) core orbital are analyzed by the Origin software. Keywords ZnO nanoparticles · FTIR · Raman spectroscopy · XPS analysis · XRD
1 Introduction Zinc oxide (ZnO) is recognized as one of the wide bandgap (WBG) (3.37 eV) semiconductors which has unique and fascinating properties to explore various technological applications in photovoltaic, sensor and UV-protective materials [1, 2]. The WBG materials are excellent in high breakdown voltage, excellent thermal stability, and high critical electric field strength, but difficult to grow up to area size, difficulty to introduce doping, and high thermal conductivity [3]. Metal doping such as Mg [4], Bi [5], Co [6, 7], Cu, Al [8], Fe [9], Mn [10], Co [11], Ni [12], and Cu [13] and their potential applications in the fabrication of microelectronics and optoelectronic devices. Among this, the transition metal Cu is very significant due to high electrical conductivity, high diffusivity, and almost similar ionic radii as that of ZnO [14]. The nanostructured Cu-doped ZnO * Bibhu P. Swain [email protected]; [email protected] 1
Department of Physics, National Institute of Technology Manipur, Langol, Imphal 795004, India
(Cu–ZnO) has exhibited modulated optical emission due to tuning the doping level in the optical bandgap. Ivanova et al. investigated the structural and optical characterization of the facile deposition of Cu–ZnO films [15]. Mani et al. reported the influence of copper doping on structural, optical, and sensing properties of spray-deposited zinc oxide thin films [16]. Sahu et al. investigated the microstructural and optical investigations on sonochemically synth
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