The SiC Single Crystal Growth from Nanomaterial Precursor
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MRS Advances © 2019 Materials Research Society. This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http:// creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited. DOI: 10.1557/adv.2019.250
The SiC Single Crystal Growth from Nanomaterial Precursor Yoshimitsu Yamada CPD Technology Institute, 21-4-3 Nigawatakamaru Takaraduka City, 665-0063, Japan
ABSTRACT
Unlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.
INTRODUCTION: The conventional SiC single crystals have been grown from the vapors or the solutions, including Si and C atoms and their compounds, since SiC does not have a liquid phase. The crystal growth from lean source materials like the vapors and the solutions necessarily progresses through the layer by layer growth mechanism, and is dominated by spiral growth [1,2]. The high concentration screw dislocation caused the deterioration of the crystal quality. In order to solve this problem, The CPD method in which nanomaterials of SiO2 and C were used as the raw materials, was proposed at ICSCRM2001[3]. In the CPD method, nanometer size raw materials are mixed and changed into micrometer size particles by the spray dry method. Such a micrometer size particle which consists of the ultrafine SiO 2 and C particles can be regarded as a droplet of the melt of SiC which reacts on or near the seed crystal surface to form the epitaxial SiC crystal and grows the SiC single crystal in three dimensions.
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The continuous feed of the particle precursor in CPD method will be able to realize the continuous growth of SiC single crystal. The SiC single crystals grown by the CPD method in many cases inherited the polytypes of the seed crystals [4,5]. In order to reveal the cause of this fact, the growth mechanism of the SiC single crystal in the CPD method was investigated through the crystal growth experiments by the CPD method on the seed surfaces with different electric c
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