The study of Mg 2 Sn Thin Film Material for Heat Energy Conversion Applications in Room Temperature Range
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The study of Mg2Sn Thin Film Material for Heat Energy Conversion Applications in Room Temperature Range Mikihiko Nishitani, Tatsuki Yokoyama, Yukihiro Morita and Tessei Kurashiki MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.348, Published online: 16 May 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116003480 How to cite this article: Mikihiko Nishitani, Tatsuki Yokoyama, Yukihiro Morita and Tessei Kurashiki The study of Mg2Sn Thin Film Material for Heat Energy Conversion Applications in Room Temperature Range. MRS Advances, Available on CJO 2016 doi:10.1557/ adv.2016.348 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.348
The study of Mg2Sn Thin Film Material for Heat Energy Conversion Applications in Room Temperature Range Mikihiko Nishitani, Tatsuki Yokoyama, Yukihiro Morita, Tessei Kurashiki Graduate School of Engineering Osaka University
ABSTRACT A study of Mg2Sn thin film material expected a high Thermo-Electrical (TE) characteristics in Room Temperature (RT) range is presented. The single phase (cubic crystal) Mg2Sn thin film is successfully formed on a glass substrate at 550 degree C with the conventional magnetron sputtering process when a metal layer of silver (Ag) or indium (In) of less than a hundred nanometer thickness is pre-coated before the deposition of Mg2Sn. The pre-coated material of Ag or In is diffused into the Mg2Sn film. P-type doping for the Mg2Sn by Ag is successful in this process, but n-type doping for the Mg2Sn film by In is not. In addition, it is found on Ag doping films that the Seebeck coefficient doesn’t decrease with the increase of the conductivity due to Ag doping which is different from the dependency of Ag doping in the bulk of Mg2Sn.
INTRODUCTION Thin film material rather than bulk is suitable for heat energy conversion application device in the range of RT such as a battery of biosensor, reuse of heat energy of home electronic appliances and so on. The Mg2X system (X=Sn,Ge,Si) and related solid solution material is one of the most suitable material for such TE applications because of the material parameters in the range of RT, the abundance of constituents, non-toxicity, low density (lightness) and biological safety. According to Table 1, it is found that the material based on Mg2Sn is the most suitable of Mg2X system (X=Sn,Ge,Si) since the bandgap (Eg) is smaller than other related materials and the electrical mobility and thermal conductivity are better as a thermoelectric property [1]. Therefore, we especially focused on the Mg2Sn thin film material in this study. Many reports of the bulk Mg2Sn material were published on the electrical and thermo-electrical properties [2-4]. Valence control of Mg2Sn was succeeded in doping of silver (Ag) as a
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