The Velocity-Field Characteristic Of Indium Nitride
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* Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 School of Electrical Engineering, Cornell University, Ithaca, New York 14853 Naval Surface Warfare Center, Code T44, Building 1470, Dahlgren, Virginia 22448
Abstract We determine the velocity-field characteristic of wurtzite indium nitride using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high room temperature peak drift velocity, 4.2 x 10i cm/s, at a doping concentration of 1 x 10i' cm- 3 . This exceeds that of gallium nitride, 2.9 x 10i cm/s, by approximately 40 %. For our nominal parameter selections, the saturation drift velocity of indium nitride is found to be 1.8 x 10' cm/s. The device performance of this material, as characterized by the cut-off frequency, is found to superior to that of gallium nitride, gallium arsenide, and silicon.
Introduction The III-V nitride semiconductors, gallium nitride ( GaN ), aluminum nitride ( AIN ), and indium nitride ( InN ), have long been recognized as promising candidates for semiconductor device applications [1]. While initial efforts to research these materials were hindered by growth difficulties, recent improvements in material quality has made possible the realization of blue lasers [2] and high performance transistors [3]. These developments have fueled considerable interest in the III-V nitrides. In order to analyze and improve the design of nitride based devices, a thorough understanding of electron transport in these materials is necessary. While electron transport in GaN has been extensively examined [4, 5, 6, 7, 8, 9], thus far very little has been done to examine electron transport in InN. InN possesses a direct band gap of 1.89 eV at room temperature [1]. While this gap is smaller than that of GaN, 3.39 eV [1], it is larger than that of gallium arsenide ( GaAs ), 1.42 eV [10], and is certainly large enough for many high power and high temperature applications. A large energy separation between the upper conduction band satellite valley minima and the central valley minimum, in concert with a low effective mass and a large optical phonon energy, suggest high peak and saturation drift velocities for InN [4, 5]. Clearly, electron transport in InN is worthy of further investigation. In this paper, we report on the velocity-field characteristic of InN [11, 12]. We determine this characteristic, as well as that of GaN, using an ensemble Monte Carlo approach. Throughout this analysis, we focus on wurtzite InN and wurtzite GaN. We find that the transport characteristics of InN are superior to those of GaN, as well as those of GaAs and silicon ( Si ). We hope that these results will stimulate further interest in InN.
845 Mat. Res. Soc. Symp. Proc. Vol. 482 01998 Materials Research Society
Simulations The approach adopted here is nearly the same as that employed by Bhapkar and Shur for the treatment of wurtzite GaN [9]. A three-valley model for the conduction band is employed. Non-parabolicity is con
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