Thickness-dependent physical properties of sputtered V 2 O 5 films and Ti/V 2 O 5 /n-Si Schottky barrier diode
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Thickness‑dependent physical properties of sputtered V2O5 films and Ti/V2O5/n‑Si Schottky barrier diode Meltem Donmez Kaya1,2 · Buse Comert Sertel1,2 · Nihan Akin Sonmez1,3 · Mehmet Cakmak1,3 · Suleyman Ozcelik1,3 Received: 18 June 2020 / Accepted: 25 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Vanadium pentoxide ( V2O5) thin films were grown by radio frequency magnetron sputtering on n-type silicon (n-Si) and glass substrates at 500 °C. V2O5 thin films were deposited with various thicknesses (100–400 nm). The effect of film thickness on the physical properties of the films was systematically investigated by different characterization techniques. The structural, morphological, optical and carrier properties of the samples were characterized using various techniques. All of the obtained films were found to have an orthorhombic structure and preferred orientation along (001) plane. The band gap energy values of the films were found to be in the range from 2.23 to 2.50 eV, and their optical transmittance were in the range from 20 to 80% in the visible region. With increasing film thickness, it was seen that the surface roughness increased and the resistivity decreased. Then, electrical parameters of the Ti/V2O5 Schottky diode fabricated on n-Si substrate by the sputtering system were presented at the room temperature. The obtained experimental results showed that the deposited V2O5 films can be used in electro-optical applications. Keywords Vanadium pentoxide · Magnetron sputtering · Thin films · Schottky barrier diode · I–V characteristics · Norde and Cheung Methods
1 Introduction Vanadium pentoxide, especially in thin-film form, have attracted considerable interest among the transition metal oxide semiconductors (e.g., ZnO, T iO2, SnO2, WO3) due to its fascinating properties and wide application range [1–4]. Recently, V2O5 has been under widely investigation because of industrial applications such as sensors [5], IR detectors [6], electrochromic devices [7], schottky diodes [8], optical switching devices [9], and reversible cathode materials in Li batteries [10]. V2O5 is n-type semiconductor and crystallizes with an orthorhombic unit cell structure [11]. In addition, V2O5 have been reported a promising material with properties multivalency, layered structure, wide optical band gap, * Meltem Donmez Kaya [email protected] 1
Photonics Application and Research Center, Gazi University, 06500 Ankara, Turkey
2
Department of Advanced Technologies, Gazi University, 06500 Ankara, Turkey
3
Department of Photonics, Gazi University, 06500 Ankara, Turkey
excellent thermoelectric property, good chemical and thermal stability, high response and selective interaction with gases etc. [4, 12]. The vanadium oxides have variety oxidation states, such as VO ( V2+, rocksalt structure), V 2O3 (V3+, corundum), VO2 (V4+, rutile), V 2O5 (V5+, layered orthorhombic) and the phase changes between their oxides depending on the atmospheric condition and temper
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