Thin Films and Heterostructures for Oxide Electronics
With the ever-shrinking dimensions and ever-increasing speeds of conventional semiconductor-based micro and opto-electronic devices, scientific limitations are beginning to be felt by the technology sector in keeping pace with the newer device demands of
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Multifunctional Thin Film Series Editors: Orlando Auciello, Argonne National Laboratory, Ramamoorthy Ramesh, University of California at Berkeley The basic applied science and applications to micro- and nano-devices of multifunctional thin films span several fast-evolving interdisciplinary fields of research and technological development worldwide. A major driving force for the extensive research being performed in many universities, industrial and national laboratories is the promise of applications to a new generation of advanced microand nano-devices. These applications can potentially revolutionize current technologies and /or create new ones while simultaneously creating multibillion dollar markets.) Multifunctional thin films cover a wide range of materials from metals to insulators to organics, including novel nanostructured metals, semiconductors, oxides, widebandgap, polymers, self-assembled organic layers and many other materials. Series titles: Nanoscale Phenomena in Ferroelectric Thin Films Seungbum Hong Graded FerroelectricSj TranspacitorSy and Transponents Joseph V. Mantese and 5. Pamir Alpay Thin Films and Heterostructures for Oxide Electronics Satischandra B. Ogale
Thin Fiims and Heterostructures for Oxide Electronics
Satischandra B. Ogale The University of Maryland U.S.A.
Springer
library of Congress Cataloging-in-Publication Data Ogale, Satischandra B. Thin films and heteroslnictnres for oxide dedronics / Satischandra B. Ogale. p. cm. - (Muttiiiinctional thin fdm series.) Includes bibUographical references and index. ISBN 10: 0-387-25802-7 ISBN 10: 0-387-26089-7 (e-book) ISBN 13: 9780387258027 ISBN 13: 9780387260891 (e-book) 1. Electronics—Materials. 2. TUnfilms. 3. Metallic oxides. L Title. U. Series TK7871.032 2005 621.381—dc22 2005049016
Printed on acid-free paper. ® 2005 S]»inger Science+Business Media, Inc. All rights reserved. This work may not be translated or copied in whole or in part without the written pomission of the publisher (Springer Science+Business Media, Inc., 233 Spring Street, New Yoik, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection widi any form of information storage and retrieval, electronic adaptation, cmnputer software, or by similar or dissimilar methodology now know cr hereafter developed is forbidden. The use in this publication of trade names, tiademaiks, service marics and similar terms, even if the are not identified as such, is not to be taken as an e}q)ression of opinion as to whether or not they are sutgect to proprietary rights. Printed in the United States of America. 9 8 7 6 5 4 3 2 1 springeronlincoom
SPIN 11054252
CONTENTS Preface
ix
Ferroelectrics, Nano-scale phenomena, High k Dielectrics
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Chapter 1: Nanoscale Phenomena in Ferroelectric Thin Films. V. Nagarajan, T. Zhao, H. Zheng and R. Ramesh
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Chapter 2: High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs D. G. Schlom, C. A. Billman, J. H. Haeni, J. Lettieri, P. H. 31 Tan, R.R.M. Held, S.Volk and K.J. Hubbard