Thin Film Composite Heterostructures of Oxide Multicomponent Perovskites for Electronics

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Thin Film Composite Heterostructures of Oxide Multicomponent Perovskites for Electronics Kazuhiro Endo1, Petre Badica2, Shunichi Arisawa3, Hiroshi Kezuka4, Hidehito Nanto1, Noriaki Ikenaga1, Masahiro Seto1, Hiroshi Saito1, Tamio Endo5 1

Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japan National Institute of Materials Physics, Atomistilor 105bis, Bucharest-Magurele 077125, Romania 3 National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan 4 Tokyo University of Technology, Hachioji, Tokyo, Japan 5 Mie University, 1577 Kurima, Tsu, Mie 514-8507, Japan 2

ABSTRACT Oxide materials for electronics show recently significant progress. Among the most interesting are oxide composite heterostructures made of thin films. They are taking advantage of integration, anisotropy and synergetic concepts leading to new types of devices and functionalities. Remarkable is that, in the last few years, new devices and artificial materials showing new phenomena were demonstrated. At the same time, their synthesis, processing or fabrication is very often by complex, sophisticated, and, hence, by expensive methods. For further industrial implementation, deep understanding of the growth principles and concepts is required. On a higher level, understanding of the bi-directional relationship between the general and particular principles becomes important and deserves much attention. The immediate benefit is that knowledge on growth for one material can be transferred to another one. This may lead for search of less expensive but optimum technological approaches and can also lead to generation of new materials and devices. In our work we have analyzed the relationship between the particular and general growth principles for some oxide multicomponent perovskites. Materials used in our examples are Bi-Sr-Ca-Cu-O and YBa2Cu3O7, (Ca, Sr)CuO2, (Ca, Ba)CuO2 and Bi4Ti3O12. Presented thin films or heterostructures are with c-axis and non-c-axis orientations. We discuss and we review based on our results film-substrate lattice relationships, principles to control the growth mechanism, the morphology/roughness, the uniformity, and the stability domain and inter diffusion aspects. INTRODUCTION By controlled stacking of alternate two-dimensional layers new heterostructures can be built. The most common approach is to stack materials with layered structures having c-axis parallel to each other and normal to the substrate. For a superconductor- non-superconductorsuperconductor heterostructure this is the most convenient geometry to generate a tunnelling-junction device. Low coherence length of HTS along c-axis imposes the necessity to produce a very thin non-superconducting layer with thickness comparable with coherence length (∼2 nm). At present, this is technically challenging. One possible solution is to realize a non-c axis heterostructure. For the non c-axis heterostructures, layers may have different orientations

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between them and with the substrate so that it would be possible to tak

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