Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics
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Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics C.D. Cress, Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA J.J. McMorrow, Global Strategies Group (North America) Inc., Crofton, Maryland 21114, USA J.T. Robinson, Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA A.L. Friedman, Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA H.L. Hughes and B.D. Weaver, Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA B.J. Landi, Department of Chemical and Biomedical Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA Address all correspondence to C.D. Cress at [email protected] (Received 22 June 2011; accepted 12 August 2011)
Abstract We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, for total ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiations with ±1 MV/cm across the gate dielectric have little effect on the threshold voltage, yielding shifts of less than ±0.25 V and no detrimental effect on SWCNT mobility or maximum drain current. This illustrates the need to consider the total device material composition when investigating the radiation response of carbon nanoelectronics and substantiates the applicability of SWCNT-based nanoelectronics for use in high TID environments.
Significant advances in performance, functionality, and highyield directed self-assembly of single-walled carbon nanotube (SWCNT)-based nanoelectronics continue to shift the technology closer toward adoption in niche terrestrial and space-based applications.[1–6] Regarding space applications, the small cross section and strong bonding structure of SWCNTs may reduce the susceptibility of SWCNT-based transistors [either singlenanotube field-effect transistors or those based on SWCNT thin films (TFTs)] to single event upsets or defect formation. However, total ionizing dose (TID) effects that result from repeated exposure to ionizing radiation primarily degrade the dielectric components of metal oxide semiconductor (MOS) devices and remain the principal vulnerability for SWCNT-TFTs.[7,8] For example, we recently observed a threshold voltage shift of about −0.8 V following a TID of 2 Mrad(Si) for SWCNT-TFTs with a SiO2 gate oxide of 100 nm.[9] Therefore, developing dielectric materials for TID hardening SWNCT-based devices, by reducing the susceptibility or mitigating the effects of ionizing radiation-induced trapped charge accumulation, is necessary to ensure
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